Selective synthesis of compound semiconductor/oxide composite nanowires.

Semiconductor/oxide composite nanowires (NWs) were synthesized by molecular beam epitaxial growth and subsequent wet oxidation. Nonselective and selective oxidation conditions applied to the GaAs/AlGaAs core-shell NWs grown on silicon substrates produced GaOx/AlGaOx and GaAs/AlGaOx NWs, respectively. The oxidized amorphous AlGaOx shell produced cathodoluminescence over a wide spectral range encompassing ultraviolet and visible wavelengths, possibly sourced from molecular species related to oxygen.

Growth of dilute nitride GaAsN/GaAs heterostructure nanowires on Si substrates.

The concept of band engineering dilute nitride semiconductors into nanowires is introduced. Using plasma-assisted molecular beam epitaxy, dilute nitride GaAsN/GaAs heterostructure nanowires are grown on silicon (111) substrates. Growth of the nanowires under high As overpressure results in a regular wire diameter of 350 nm with a length exceeding 3 μm.

Probability of twin formation on self-catalyzed GaAs nanowires on Si substrate.

We attempted to control the incorporation of twin boundaries in self-catalyzed GaAs nanowires (NWs). Self-catalyzed GaAs NWs were grown on a Si substrate under various arsenic pressures using molecular beam epitaxy and the vapor-liquid-solid method. When the arsenic flux is low, wurtzite structures are dominant in the GaAs NWs.

Dissimilar effect of perming and bleaching treatments on cuticles: advanced hair damage model based on elution and oxidation of S100A3 protein.

Hair treatment chemicals induce sudden and severe hair damage. In this study, we examined cuticles from untreated, permed, and bleached hair that were mechanically discriminated by shaking in water. Both perming and bleaching treatments are prone to easily delaminate cuticles.