Effects of He and Ar Heat-Assisted Plasma Treatments on the Adhesion Properties of Polytetrafluoroethylene (PTFE).

Heat-assisted plasma (HAP) treatment using He gas is known to improve the adhesive-bonding and adhesive-free adhesion properties of polytetrafluoroethylene (PTFE). In this study, we investigated the effects of He and Ar gaseous species on the HAP-treated PTFE surface. Epoxy (EP) adhesive-coated stainless steel (SUS304) and isobutylene-isoprene rubber (IIR) were used as adherents for the evaluation of the adhesive-bonding and adhesive-free adhesion properties of PTFE.

Surface Modification and Adhesion Mechanism of Polypropylene with Low-Energy Electron-Beam Treatments.

Recently, smaller-size electron-beam (EB) accelerators have offered EB irradiation in laboratory systems. Therefore, polymer surface treatments with low-energy EB have been developed in the past years. For high adhesion strength, low-energy EB treatment is also a promising method in comparison to plasma surface treatment.

Surface Modification of Poly(ether ether ketone) through Friedel-Crafts Reaction for High Adhesion Strength.

Poly(ether ether ketone) (PEEK) possesses attractive mechanical and thermal properties but demonstrates poor adhesion. To overcome this disadvantage, in this study, the surface modification of PEEK or PEEK-based carbon-fiber-reinforced thermoplastics (CFRTP) was performed through the Friedel-Crafts reaction and successive epoxidation. Under optimized reaction conditions, surface modification was achieved without surface deterioration, and epoxy groups were introduced.

Drastic Improvement in Adhesion Property of Polytetrafluoroethylene (PTFE) via Heat-Assisted Plasma Treatment Using a Heater.

The heating effect on the adhesion property of plasma-treated polytetrafluoroethylene (PTFE) was examined. For this purpose, a PTFE sheet was plasma-treated at atmospheric pressure while heating using a halogen heater. When plasma-treated at 8.

Finishing of AT-cut quartz crystal wafer with nanometric thickness uniformity by pulse-modulated atmospheric pressure plasma etching.

Quartz resonator is a very important device to generate a clock frequency for information and telecommunication system. Improvement of the productivity of the quartz resonator is always required because a huge amount of the resonator is demanded for installing to various electronic devices. Resonance frequency of the quartz resonator is decided by the thickness of the quartz crystal wafer.

Highly efficient damage-free correction of thickness distribution of quartz crystal wafers by atmospheric pressure plasma etching.

A new finishing method was developed to correct the thickness distribution of a quartz crystal wafer by the numerically controlled scanning of a localized atmospheric pressure plasma. The thickness uniformity level of a commercially available AT-cut quartz crystal wafer was improved to less than 50 nm without any subsurface damage by applying one correction process. Furthermore, applying a pulse-modulated plasma markedly decreased the correction time of the thickness distribution without breaking the quartz crystal wafer by thermal stress.