Electrical Properties of Amorphous Indium Zinc Tin Oxide Thin Film Transistor with Y₂O₃ Gate Dielectric.

High- Y₂O₃ thin films were investigated as the gate dielectric for amorphous indium zinc tin oxide (IZTO) thin-film transistors (TFTs). Y₂O₃ gate dielectric was deposited by radio frequency magnetron sputtering (RF-MS) under various working pressures and annealing conditions. Amorphous IZTO TFTs with SiO₂ as the gate dielectric showed a high field-effect mobility (μ) of 19.