Capacitance-voltage characteristics of sub-nanometric AlO / TiO laminates: dielectric and interface charge densities.

Advanced amorphous sub-nanometric laminates based on TiO and AlO were deposited by atomic layer deposition at low temperature. Low densities of 'slow' and 'fast' interface states are achieved with values of 3.96 · 10 cm and 4.

Structural and Dielectric Properties of Subnanometric Laminates of Binary Oxides.

Capacitors with a dielectric material consisting of amorphous laminates of Al2O3 and TiO2 with subnanometer individual layer thicknesses can show strongly enhanced capacitance densities compared to the bulk or laminates with nanometer layer thickness. In this study, the structural and dielectric properties of such subnanometer laminates grown on silicon by state-of-the-art atomic layer deposition are investigated with varying electrode materials. The laminates show a dielectric constant reaching 95 combined with a dielectric loss (tan δ) of about 0.