A model study of teaching method reform of computer laboratory course integrating internet of things technology.

The Internet of Things (IoT) is gradually changing the way teaching and learning take place in on-campus programs. In particular, face capture services improve student concentration to create an efficient classroom atmosphere by using face recognition algorithms that support end devices. However, reducing response latency and executing face analysis services effectively in real-time is still challenging.

Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs.

The failure mechanism of thermal gate oxide in silicon carbide (SiC) power metal oxide semiconductor field effect transistors (MOSFETs), whether it is field-driven breakdown or charge-driven breakdown, has always been a controversial topic. Previous studies have demonstrated that the failure time of thermally grown silicon dioxide (SiO) on SiC stressed with a constant voltage is indicated as charge driven rather than field driven through the observation of Weibull Slope β. Considering the importance of the accurate failure mechanism for the thermal gate oxide lifetime prediction model of time-dependent dielectric breakdown (TDDB), charge-driven breakdown needs to be further fundamentally justified.

An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures.

The body diode degradation in SiC power MOSFETs has been demonstrated to be caused by basal plane dislocation (BPD)-induced stacking faults (SFs) in the drift region. To enhance the reliability of the body diode, many process and structural improvements have been proposed to eliminate BPDs in the drift region, ensuring that commercial SiC wafers for 1.2 kV devices are of high quality.

A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching.

A new cell topology named the dodecagonal (a polygon with twelve sides, short for Dod) cell is proposed to optimize the gate-to-drain capacitance (Cgd) and reduce the specific ON-resistance (Ron,sp) of 4H-SiC planar power MOSFETs. The Dod and the octagonal (Oct) cells are used in the layout design of the 650 V SiC MOSFETs in this work. The experimental results confirm that the Dod-cell MOSFET achieves a 2.

Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs.

650 V SiC planar MOSFETs with various JFET widths, JFET doping concentrations, and gate oxide thicknesses were fabricated by a commercial SiC foundry on two six-inch SiC epitaxial wafers. An orthogonal P+ layout was used for the 650 V SiC MOSFETs to reduce the ON-resistance. The devices were packaged into open-cavity TO-247 packages for evaluation.

A Brief Talk on the Design of Biopharmaceutical Separation and Purification Technology Course.

Biological separation and purification technology is the basic technology of modern biotechnology, which is widely used in the pharmaceutical industry, especially the biopharmaceutical industry. In recent years, the biopharmaceutical industry has had a lot of room for development in the development of science and technology in South Korea, and the research on biopharmaceutical equipment and pharmaceutical technology has also achieved good research results. This article proposes a brief discussion on the design of biopharmaceutical separation and purification technology courses.

Research on the Impact of Regional Economy on Industrial Development from the Perspective of Big Data.

In order to study the driving force of China's rapid economic development in the past ten years, the study takes Guizhou, Yunnan, and Guangxi as a case study, focusing on the big data assets exchange (GBDEx) and Beibu Gulf Economic Zone, and discusses the impact of Internet plus economic and government data and the big data system on regional economy. Finally, it is believed that the Internet and big data fully avoid the disadvantages of traffic distance between the western region and the eastern region, make full and efficient cooperation between enterprises and institutions in the central and western regions and Chinese and foreign economic entities, and strengthen the control of economic behavior from the big data level with the support of the service-oriented government. The information entropy output from the Internet big data system has led to a significant entropy reduction process in China's economic environment and a more orderly economic system, which is also an important reason for the rapid development of China's economy.

Detection of dielectrophoretic driven passage of single cells through micro-apertures in a silicon nitride membrane.

Silicon (Si) microstructures are fabricated comprising a micro-aperture (10-25 microm) in a 1.2 kA silicon nitride membrane connecting two microfluidic compartments. Dielectrophoretic forces are created on-chip, which guide the passage of single CHO cells through the microaperture.

Simulation of biological ion channels with technology computer-aided design.

Computer simulations of realistic ion channel structures have always been challenging and a subject of rigorous study. Simulations based on continuum electrostatics have proven to be computationally cheap and reasonably accurate in predicting a channel's behavior. In this paper we discuss the use of a device simulator, SILVACO, to build a solid-state model for KcsA channel and study its steady-state response.

Parameter-extraction of a two-compartment model for whole-cell data analysis.

Neuronal modeling of patch-clamp data is based on approximations which are valid under specific assumptions regarding cell properties and morphology. Certain cells, which show a biexponential capacitance transient decay, can be modeled with a two-compartment model. However, for parameter-extraction in such a model, approximations are required regarding the relative sizes of the various model parameters.