Selective Area Epitaxy of Quasi-1-Dimensional Topological Nanostructures and Networks.

Quasi-one-dimensional (1D) topological insulators hold the potential of forming the basis of novel devices in spintronics and quantum computing. While exposure to ambient conditions and conventional fabrication processes are an obstacle to their technological integration, ultra-high vacuum lithography techniques, such as selective area epitaxy (SAE), provide all the necessary ingredients for their refinement into scalable device architectures. In this work, high-quality SAE of quasi-1D topological insulators on templated Si substrates is demonstrated.

Optimizing Experimental Conditions for Accurate Quantitative Energy-Dispersive X-ray Analysis of Interfaces at the Atomic Scale.

The invention of silicon drift detectors has resulted in an unprecedented improvement in detection efficiency for energy-dispersive X-ray (EDX) spectroscopy in the scanning transmission electron microscope. The result is numerous beautiful atomic-scale maps, which provide insights into the internal structure of a variety of materials. However, the task still remains to understand exactly where the X-ray signal comes from and how accurately it can be quantified.

Flux periodic oscillations and phase-coherent transport in GeTe nanowire-based devices.

Despite the fact that GeTe is known to be a very interesting material for applications in thermoelectrics and for phase-change memories, the knowledge on its low-temperature transport properties is only limited. We report on phase-coherent phenomena in the magnetotransport of GeTe nanowires. From universal conductance fluctuations measured on GeTe nanowires with Au contacts, a phase-coherence length of about 280 nm at 0.

The Low Toxicity of Graphene Quantum Dots is Reflected by Marginal Gene Expression Changes of Primary Human Hematopoietic Stem Cells.

Graphene quantum dots (GQDs) are a promising next generation nanomaterial with manifold biomedical applications. For real world applications, comprehensive studies on their influence on the functionality of primary human cells are mandatory. Here, we report the effects of GQDs on the transcriptome of CD34 hematopoietic stem cells after an incubation time of 36 hours.

Selective area growth and stencil lithography for in situ fabricated quantum devices.

The interplay of Dirac physics and induced superconductivity at the interface of a 3D topological insulator (TI) with an s-wave superconductor (S) provides a new platform for topologically protected quantum computation based on elusive Majorana modes. To employ such S-TI hybrid devices in future topological quantum computation architectures, a process is required that allows for device fabrication under ultrahigh vacuum conditions. Here, we report on the selective area growth of (Bi,Sb)Te TI thin films and stencil lithography of superconductive Nb for a full in situ fabrication of S-TI hybrid devices via molecular-beam epitaxy.

Partial magnetic ordering in one-dimensional arrays of endofullerene single-molecule magnet peapods.

The magnetic ordering and bistability of one-dimensional chains of endofullerene Dy2ScN@C80 single-molecule magnets (SMMs) packed inside single-walled carbon nanotubes (SWCNTs) have been studied using high-resolution transmission electron microscopy (HRTEM), X-ray magnetic circular dichroism (XMCD), and ab initio calculations. X-ray absorption measurements reveal that the orientation of the encapsulated endofullerenes differs from the isotropic distribution in the bulk sample, indicating a partial ordering of the endofullerenes inside the SWCNTs. The effect of the one-dimensional packing was further investigated by ab initio calculations, demonstrating that for specific tube diameters, the encapsulation is leading to energetically preferential orientations of the endohedral clusters.

Charge Transport in Low-Temperature Processed Thin-Film Transistors Based on Indium Oxide/Zinc Oxide Heterostructures.

The influence of the composition within multilayered heterostructure oxide semiconductors has a critical impact on the performance of thin-film transistor (TFT) devices. The heterostructures, comprising alternating polycrystalline indium oxide and zinc oxide layers, are fabricated by a facile atomic layer deposition (ALD) process, enabling the tuning of its electrical properties by precisely controlling the thickness of the individual layers. This subsequently results in enhanced TFT performance for the optimized stacked architecture after mild thermal annealing at temperatures as low as 200 °C.

Nanoscale x-ray investigation of magnetic metallofullerene peapods.

Endohedral lanthanide ions packed inside carbon nanotubes (CNTs) in a one-dimensional assembly have been studied with a combination of high resolution transmission electron microscopy (HRTEM), scanning transmission x-ray microscopy (STXM), and x-ray magnetic circular dichroism (XMCD). By correlating HRTEM and STXM images we show that structures down to 30 nm are resolved with chemical contrast and record x-ray absorption spectra from endohedral lanthanide ions embedded in individual nanoscale CNT bundles. XMCD measurements of an ErN@C bulk sample and a macroscopic assembly of filled CNTs indicate that the magnetic properties of the endohedral Er ions are unchanged when encapsulated in CNTs.

Sonochemical synthesis of hydrogenated amorphous silicon nanoparticles from liquid trisilane at ambient temperature and pressure.

Silicon nanoparticles (Si-NPs) are increasing in relevance in diverse fields of scientific and nanotechnological inquiry, where currently some of the most important areas of research involve energy storage and biomedical applications. The present article is concerned with a curious and scalable method for the preparation of discrete, unoxidized, hydrogenated, and amorphous Si-NPs of tunable size in the range of 1.5-50nm.

A Small Spot, Inert Gas, Ion Milling Process as a Complementary Technique to Focused Ion Beam Specimen Preparation.

This paper reports on the substantial improvement of specimen quality by use of a low voltage (0.05 to ~1 keV), small diameter (~1 μm), argon ion beam following initial preparation using conventional broad-beam ion milling or focused ion beam. The specimens show significant reductions in the amorphous layer thickness and implanted artifacts.

BiTe is a dual topological insulator.

New three-dimensional (3D) topological phases can emerge in superlattices containing constituents of known two-dimensional topologies. Here we demonstrate that stoichiometric BiTe, which is a natural superlattice of alternating two BiTe quintuple layers and one Bi bilayer, is a dual 3D topological insulator where a weak topological insulator phase and topological crystalline insulator phase appear simultaneously. By density functional theory, we find indices (0;001) and a non-zero mirror Chern number.

Unexpected Ge-Ge Contacts in the Two-Dimensional Ge Se Te Phase and Analysis of Their Chemical Cause with the Density of Energy (DOE) Function.

A hexagonal phase in the ternary Ge-Se-Te system with an approximate composition of GeSe Te has been known since the 1960s but its structure has remained unknown. We have succeeded in growing single crystals by chemical transport as a prerequisite to solve and refine the Ge Se Te structure. It consists of layers that are held together by van der Waals type weak chalcogenide-chalcogenide interactions but also display unexpected Ge-Ge contacts, as confirmed by electron microscopy analysis.

Realization of a vertical topological p-n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures.

Three-dimensional (3D) topological insulators are a new state of quantum matter, which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial material. There have been various attempts to tune the Dirac point to a desired energetic position for exploring its unusual quantum properties. Here we show a direct experimental proof by angle-resolved photoemission of the realization of a vertical topological p-n junction made of a heterostructure of two different binary 3D TI materials Bi2Te3 and Sb2Te3 epitaxially grown on Si(111).

Polarity-driven polytypic branching in cu-based quaternary chalcogenide nanostructures.

An appropriate way of realizing property nanoengineering in complex quaternary chalcogenide nanocrystals is presented for Cu2CdxSnSey(CCTSe) polypods. The pivotal role of the polarity in determining morphology, growth, and the polytypic branching mechanism is demonstrated. Polarity is considered to be responsible for the formation of an initial seed that takes the form of a tetrahedron with four cation-polar facets.

Molecular beam epitaxy growth of GaAs/InAs core-shell nanowires and fabrication of InAs nanotubes.

We present results about the growth of GaAs/InAs core-shell nanowires (NWs) using molecular beam epitaxy. The core is grown via the Ga droplet-assisted growth mechanism. For a homogeneous growth of the InAs shell, the As(4) flux and substrate temperature are critical.

Mn valency at La 0.7 Sr 0.3 MnO 3/SrTiO 3 (0 0 1) thin film interfaces.

This article presents a (scanning) transmission electron microscopy (TEM) study of Mn valency and its structural origin at La 0.7 Sr 0.3 MnO 3/SrTiO3(0 0 1) thin film interfaces.