Ultra-small InGaN green micro-light-emitting diodes fabricated by selective passivation of p-GaN.

Here, we proposed fabricating ultra-small InGaN-based micro-light-emitting diodes (µLEDs). The selective p-GaN areas were intentionally passivated using a plasma treatment and served as the electrical isolation regions to prevent the current from injecting into the InGaN quantum wells below. Three kinds of green µLEDs, two squircle shapes with widths of 5 and 4 µm and one circular shape with a diameter of 2.

Photoelectrochemical and crystalline properties of a GaN photoelectrode loaded with α-FeO as cocatalyst.

Nitrides are of particular interest in energy applications given their suitability to photocatalytically generate H from aqueous solutions. However, one of the drawbacks of nitrides is the decomposition they suffer when used in photoelectrochemical cells. Here, we report the improvement of the catalytic performance and chemical stability of a GaN electrode when it is decorated with FeO particles compared with an undecorated electrode.

Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes.

Fabrication of indium tin oxide (ITO) was optimized for InGaN-based amber/red light-emitting diodes (LEDs). A radiofrequency sputtering reduced the sheet resistivity of ITO at low pressures, and a subsequent two-step annealing resulted in a low sheet resistivity (below 2×10 Ωcm) and high transmittance (over 98%) in the amber and red regions between 590 nm to 780 nm. Double ITO layers by sputtering could form an excellent ohmic contact with p-GaN.