Electrical half-wave rectification at ferroelectric domain walls.

Domain walls in ferroelectric semiconductors show promise as multifunctional two-dimensional elements for next-generation nanotechnology. Electric fields, for example, can control the direct-current resistance and reversibly switch between insulating and conductive domain-wall states, enabling elementary electronic devices such as gates and transistors. To facilitate electrical signal processing and transformation at the domain-wall level, however, an expansion into the realm of alternating-current technology is required.

Magnetoelectric Force Microscopy on Antiferromagnetic 180 Domains in Cr₂O₃.

Magnetoelectric force microscopy (MeFM) is characterized as methodical tool for the investigation of antiferromagnetic domain states, in particular of the 180 ∘ variety. As reference compound for this investigation we use Cr 2 O 3 . Access to the antiferromagnetic order is provided by the linear magnetoelectric effect.

Strain-induced coupling of electrical polarization and structural defects in SrMnO3 films.

Local perturbations in complex oxides, such as domain walls, strain and defects, are of interest because they can modify the conduction or the dielectric and magnetic response, and can even promote phase transitions. Here, we show that the interaction between different types of local perturbations in oxide thin films is an additional source of functionality. Taking SrMnO3 as a model system, we use nonlinear optics to verify the theoretical prediction that strain induces a polar phase, and apply density functional theory to show that strain simultaneously increases the concentration of oxygen vacancies.