Influence of flexible multibeam intensity distributions on selective laser-induced etching process regimes.

The precision and versatility of selective laser-induced etching in fused silica render it indispensable for many applications in medical engineering, the semiconductor industry, and quantum technology. However, its process-limited productivity renders it unsuitable for a wider set of applications, particularly those that require cost-effective solutions. As the process is largely concerned with microprocessing applications, a promising method to enhance process efficiency is through parallelization using multiple beams with high packing density.

Dynamic correction of optical aberrations for height-independent selective laser induced etching processing strategies.

Optical aberrations are a critical issue for tight focusing and high precision manufacturing with ultrashort pulsed laser radiation in transparent media. Controlling the wave front of ultrashort laser pulses enable the correction of low order phase front distortion and significantly enhances the simplification of laser-based manufacturing of 3D-parts in glass. The influence of system-inherent, dominating aberrations such as spherical and astigmatic aberrations affect the focal area, the beam caustic and therefore the focus intensity distribution.