p-Type Schottky Contacts for Graphene Adjustable-Barrier Phototransistors.

The graphene adjustable-barriers phototransistor is an attractive novel device for potential high speed and high responsivity dual-band photodetection. In this device, graphene is embedded between the semiconductors silicon and germanium. Both n-type and p-type Schottky contacts between graphene and the semiconductors are required for this device.

Novel Graphene Adjustable-Barrier Transistor with Ultra-High Current Gain.

A graphene-based three-terminal barristor device was proposed to overcome the low on/off ratios and insufficient current saturation of conventional graphene field-effect transistors. In this study, we fabricated and analyzed a novel graphene-based transistor, which resembles the structure of the barristor but uses a different operating condition. This new device, termed graphene adjustable-barriers transistor (GABT), utilizes a semiconductor-based gate rather than a metal-insulator gate structure to modulate the device currents.

Atomic Layer Deposition for Coating of High Aspect Ratio TiO Nanotube Layers.

We present an optimized approach for the deposition of AlO (as a model secondary material) coating into high aspect ratio (≈180) anodic TiO nanotube layers using the atomic layer deposition (ALD) process. In order to study the influence of the diffusion of the AlO precursors on the resulting coating thickness, ALD processes with different exposure times (i.e.