Direct determination of minority carrier diffusion lengths at axial GaAs nanowire p-n junctions.

Axial GaAs nanowire p-n diodes, possibly one of the core elements of future nanowire solar cells and light emitters, were grown via the Au-assisted vapor-liquid-solid mode, contacted by electron beam lithography, and investigated using electron beam induced current measurements. The minority carrier diffusion lengths and dynamics of both, electrons and holes, were determined directly at the vicinity of the p-n junction. The generated photocurrent shows an exponential decay on both sides of the junction and the extracted diffusion lengths are about 1 order of magnitude lower compared to bulk material due to surface recombination.

Strongly enhanced molecular fluorescence inside a nanoscale waveguide gap.

We experimentally demonstrate dramatically enhanced light-matter interaction for molecules placed inside the nanometer scale gap of a plasmonic waveguide. We observe spontaneous emission rate enhancements of up to about 60 times due to strong optical localization in two dimensions. This rate enhancement is a nonresonant nature of the plasmonic waveguide under study overcoming the fundamental bandwidth limitation of conventional devices.