Reaction Mechanisms during Atomic Layer Deposition of AlF Using Al(CH) and SF Plasma.

Metal fluorides generally demonstrate a wide band gap and a low refractive index, and they are commonly employed in optics and optoelectronics. Recently, an SF plasma was introduced as a novel co-reactant for the atomic layer deposition (ALD) of metal fluorides. In this work, the reaction mechanisms underlying the ALD of fluorides using a fluorine-containing plasma are investigated, considering aluminum fluoride (AlF) ALD from Al(CH) and an SF plasma as a model system.

Atomic Layer Deposition of Cobalt Using H-, N-, and NH-Based Plasmas: On the Role of the Co-reactant.

This work investigates the role of the co-reactant for the atomic layer deposition of cobalt (Co) films using cobaltocene (CoCp) as the precursor. Three different processes were compared: an AB process using NH plasma, an AB process using H/N plasma, and an ABC process using subsequent N and H plasmas. A connection was made between the plasma composition and film properties, thereby gaining an understanding of the role of the various plasma species.