ACS Appl Mater Interfaces
October 2024
Flash memories are the preferred choice for data storage in portable gadgets. The charge trapping nonvolatile flash memories are the main contender to replace standard floating gate technology. In this work, we investigate metal/blocking oxide/high-k charge trapping layer/tunnel oxide/Si (MOHOS) structures from the viewpoint of their application as memory cells in charge trapping flash memories.
View Article and Find Full Text PDFThis paper presents the comparison of the microstructure of the interface zone formed between titanium (Ti Gr. 1) and steel (P265GH+N) in various processing stages—directly after explosive welding versus the annealing state. Transmission electron microscopy technique served as an excellent tool for studies of the sharp interface in-between the waves.
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