Charge Transport inside TiO Memristors Prepared via FEBID.

We fabricated memristive devices using focused electron beam-induced deposition (FEBID) as a direct-writing technique employing a Pt/TiO/Pt sandwich layer device configuration. Pinching in the measured current-voltage characteristics (), the characteristic fingerprint of memristive behavior was clearly observed. The temperature dependence was measured for both high and low resistive states in the range from 290 K down to about 2 K, showing a stretched exponential behavior characteristic of Mott-type variable-range hopping.

A tunable strain sensor using nanogranular metals.

This paper introduces a new methodology for the fabrication of strain-sensor elements for MEMS and NEMS applications based on the tunneling effect in nano-granular metals. The strain-sensor elements are prepared by the maskless lithography technique of focused electron-beam-induced deposition (FEBID) employing the precursor trimethylmethylcyclopentadienyl platinum [MeCpPt(Me)(3)]. We use a cantilever-based deflection technique to determine the sensitivity (gauge factor) of the sensor element.