Atomic-Scale Modification of Oxidation Phenomena on the Ge(100) Surface by Si Alloying.

Properties of Ge oxides are significantly different from those of widely used Si oxides. For example, the instability of GeO at device junctions causes electronic defect levels that degrade the performance of Ge-containing devices (e.g.

Unusual oxidation-induced core-level shifts at the HfO/InP interface.

X-ray photoelectron spectroscopy (XPS) is one of the most used methods in a diverse field of materials science and engineering. The elemental core-level binding energies (BE) and core-level shifts (CLS) are determined and interpreted in the XPS. Oxidation is commonly considered to increase the BE of the core electrons of metal and semiconductor elements (i.

Oxidation-Induced Changes in the ALD-AlO/InAs(100) Interface and Control of the Changes for Device Processing.

InAs crystals are emerging materials for various devices like radio frequency transistors and infrared sensors. Control of oxidation-induced changes is essential for decreasing amounts of the harmful InAs surface (or interface) defects because it is hard to avoid the energetically favored oxidation of InAs surface parts in device processing. We have characterized atomic-layer-deposition (ALD) grown AlO/InAs interfaces, preoxidized differently, with synchrotron hard X-ray photoelectron spectroscopy (HAXPES), low-energy electron diffraction, scanning tunneling microscopy, and time-of-flight elastic recoil detection analysis.

Crystalline and oxide phases revealed and formed on InSb(111)B.

Oxidation treatment creating a well-ordered crystalline structure has been shown to provide a major improvement for III-V semiconductor/oxide interfaces in electronics. We present this treatment's effects on InSb(111)B surface and its electronic properties with scanning tunneling microscopy and spectroscopy. Possibility to oxidize (111)B surface with parameters similar to the ones used for (100) surface is found, indicating a generality of the crystalline oxidation among different crystal planes, crucial for utilization in nanotechnology.

Magnetic effect on the interfacial energy of the Ni(1 1 1)/Cr(1 1 0) interface.

The work of separation and interfacial energy of the Ni(1 1 1)/Cr(1 1 0) interface are calculated via first-principles methods. Both coherent and semicoherent interfaces are considered. We find that magnetism has a significant effect on the interfacial energy, i.

Elastic anomalies in Fe-Cr alloys.

Using ab initio alloy theory, we determine the elastic parameters of ferromagnetic and paramagnetic Fe(1-c)Cr(c) (0 ≤ c ≤ 1) alloys in the body centered cubic crystallographic phase. Comparison with the experimental data demonstrates that the employed theoretical approach accurately describes the observed composition dependence of the polycrystalline elastic moduli. The predicted single-crystal elastic constants follow complex anomalous trends, which are shown to originate from the interplay between magnetic and chemical effects.

Theoretical elastic moduli of ferromagnetic bcc Fe alloys.

The polycrystalline elastic parameters of ferromagnetic Fe(1-x)M(x) (M = Al, Si, V, Cr, Mn, Co, Ni, Rh; 0 ≤ x ≤ 0.1) random alloys in the body centered cubic (bcc) crystallographic phase have been calculated using first-principles alloy theory in combination with statistical averaging methods. With a few exceptions, the agreement between the calculated and the available experimental data for the polycrystalline aggregates is satisfactory.