Lifetime and Molecular Coupling in Surface Phonon Polariton Resonators.

Surface phonon polariton (SPhP) modes in polar semiconductors offer a low-loss platform for infrared nanophotonics and sensing. However, the efficient design of polariton-enhanced sensors requires a quantitative understanding of how to engineer the frequency and lifetime of SPhPs in nanophotonic structures. Here, we study organ-pipe resonances in 4H-SiC trenches as a prototype system for infrared sensing.

Toward gallium oxide power electronics.

Ultrawide-bandgap semiconductors show promise for high-power transistors.

Collective Phonon-Polaritonic Modes in Silicon Carbide Subarrays.

Localized surface phonon polaritons (LSPhPs) can be implemented to engineer light-matter interactions through nanoscale patterning for a range of midinfrared application spaces. However, the polar material systems studied to date have mainly focused on simple designs featuring a single element in the periodic unit cell. Increasing the complexity of the unit cell can serve to modify the resonant near-fields and intra- and inter-unit-cell coupling as well as to dictate spectral tuning in the far-field.

Steady-state methods for measuring in-plane thermal conductivity of thin films for heat spreading applications.

The development of high thermal conductivity thin film materials for the thermal management of electronics requires accurate and precise methods for characterizing heat spreading capability, namely, in-plane thermal conductivity. However, due to the complex nature of thin film thermal property measurements, resolving the in-plane thermal conductivity of high thermal conductivity anisotropic thin films with high accuracy is particularly challenging. Capable transient techniques exist; however, they usually measure thermal diffusivity and require heat capacity and density to deduce thermal conductivity.

Engineering the Spectral and Spatial Dispersion of Thermal Emission via Polariton-Phonon Strong Coupling.

Strong coupling between optical modes can be implemented into nanophotonic design to modify the energy-momentum dispersion relation. This approach offers potential avenues for tuning the thermal emission frequency, line width, polarization, and spatial coherence. Here, we employ three-mode strong coupling between propagating and localized surface phonon polaritons, with zone-folded longitudinal optic phonons within periodic arrays of 4H-SiC nanopillars.

Band Alignment of ScAlN/GaN Heterojunctions.

ScAlN is an emergent ultrawide-band-gap material with both a high piezoresponse and demonstrated ferroelectric polarization switching. Recent demonstration of epitaxial growth of ScAlN on GaN has unlocked prospects for new high-power transistors and nonvolatile memory technologies fabricated from these materials. An understanding of the band alignments between ScAlN and GaN is crucial in order to control the electronic and optical properties of engineered devices.

Narrowband Polaritonic Thermal Emitters Driven by Waste Heat.

There are a broad range of applications for narrowband long-wave infrared (LWIR) sources, especially within the 8-12 μm atmospheric window. These include infrared beacons, free-space communications, spectroscopy, and potentially on-chip photonics. Unfortunately, commercial light-emitting diode (LED) sources are not available within the LWIR, leaving only gas-phase and quantum cascade lasers, which exhibit low wall-plug efficiencies and in many cases require large footprints, precluding their use for many applications.

Tunable Thermal Energy Transport across Diamond Membranes and Diamond-Si Interfaces by Nanoscale Graphoepitaxy.

The development of electronic devices, especially those that involve heterogeneous integration of materials, has led to increased challenges in addressing their thermal operational temperature demands. The heat flow in these systems is significantly influenced or even dominated by thermal boundary resistance at the interface between dissimilar materials. However, controlling and tuning heat transport across an interface and in the adjacent materials has so far drawn limited attention.

Heterostructure WSe-GaO Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics.

Layered materials separated from each bulk crystal can be assembled to form a strain-free heterostructure by using the van der Waals interaction. We demonstrated a heterostructure n-channel depletion-mode β-GaO junction field-effect transistor (JFET) through van der Waals bonding with an exfoliated p-WSe flake. Typical diode characteristics with a high rectifying ratio of ∼10 were observed in a p-WSe/n-GaO heterostructure diode, where WSe and β-GaO were obtained by mechanically exfoliating each crystal.

Quasi-Two-Dimensional h-BN/β-GaO Heterostructure Metal-Insulator-Semiconductor Field-Effect Transistor.

β-gallium oxide (β-GaO) and hexagonal boron nitride (h-BN) heterostructure-based quasi-two-dimensional metal-insulator-semiconductor field-effect transistors (MISFETs) were demonstrated by integrating mechanical exfoliation of (quasi)-two-dimensional materials with a dry transfer process, wherein nanothin flakes of β-GaO and h-BN were utilized as the channel and gate dielectric, respectively, of the MISFET. The h-BN dielectric, which has an extraordinarily flat and clean surface, provides a minimal density of charged impurities on the interface between β-GaO and h-BN, resulting in superior device performances (maximum transconductance, on/off ratio, subthreshold swing, and threshold voltage) compared to those of the conventional back-gated configurations. Also, double-gating of the fabricated device was demonstrated by biasing both top and bottom gates, achieving the modulation of the threshold voltage.

Technique for the dry transfer of epitaxial graphene onto arbitrary substrates.

To make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO(2), GaN and Al(2)O(3) substrates using a thermal release tape. Subsequent Hall effect measurements illustrated that minimal degradation in the carrier mobility was induced following the transfer process in lithographically patterned devices.