The on/off current ratio in organic ferroelectric field-effect transistors (FeFETs) is largely determined by the position of the threshold voltage, the value of which can show large device-to-device variations. Here we show that by employing a dual-gate layout for the FeFET, we can gain full control over the on/off ratio. In the resulting dual-gate FeFET the ferroelectric gate provides the memory functionality and the second, non-ferroelectric, control gate is advantageously used to set the threshold voltage.
View Article and Find Full Text PDFA dual-gate organic field-effect transistor is investigated for electrically pumped lasing. The two gates can independently accumulate electrons and holes, yielding current densities exceeding the lasing threshold. Here, the aim is to force the electrons and holes to recombine by confining the charges in a single semiconducting film.
View Article and Find Full Text PDFFerroelectric poly(vinylidene-fluoride) (PVDF) has, in the past, been proposed as an ideal candidate for data storage applications as it exhibits a bistable, remanent, polarization that can repeatedly be switched by an electric field. However, fabrication of smooth ferroelectric PVDF thin films, as required for microelectronic applications, is a long-standing problem. At present, the copolymer of PVDF with trifluoroethylene P(VDF-TrFE) is used, but the stack integrity and the limited thermal stability of its remanent polarization hamper large-scale integration.
View Article and Find Full Text PDFThe first dual-gate thin-film transistor (DGTFT) was reported in 1981 with CdSe as the semiconductor. Other TFT technologies such as a-Si:H and organic semiconductors have led to additional ways of making DGTFTs. DGTFTs contain a second gate dielectric with a second gate positioned opposite of the first gate.
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