Enhanced CDC of B cell chronic lymphocytic leukemia cells mediated by rituximab combined with a novel anti-complement factor H antibody.

Rituximab therapy for B cell chronic lymphocytic leukemia (B-CLL) has met with mixed success. Among several factors to which resistance can be attributed is failure to activate complement dependent cytotoxicity (CDC) due to protective complement regulatory proteins, including the soluble regulator complement factor H (CFH). We hypothesized that rituximab killing of non-responsive B-CLL cells could be augmented by a novel human monoclonal antibody against CFH.

Room-temperature sub-band gap optoelectronic response of hyperdoped silicon.

Room-temperature infrared sub-band gap photoresponse in silicon is of interest for telecommunications, imaging and solid-state energy conversion. Attempts to induce infrared response in silicon largely centred on combining the modification of its electronic structure via controlled defect formation (for example, vacancies and dislocations) with waveguide coupling, or integration with foreign materials. Impurity-mediated sub-band gap photoresponse in silicon is an alternative to these methods but it has only been studied at low temperature.

Selenium segregation in femtosecond-laser hyperdoped silicon revealed by electron tomography.

Doping of silicon with chalcogens (S, Se, Te) by femtosecond laser irradiation to concentrations well above the solubility limit leads to near-unity optical absorptance in the visible and infrared (IR) range and is a promising route toward silicon-based IR optoelectronics. However, open questions remain about the nature of the IR absorptance and in particular about the impact of the dopant distribution and possible role of dopant diffusion. Here we use electron tomography using a high-angle annular dark-field (HAADF) detector in a scanning transmission electron microscope (STEM) to extract information about the three-dimensional distribution of selenium dopants in silicon and correlate these findings with the optical properties of selenium-doped silicon.

Insulator-to-metal transition in selenium-hyperdoped silicon: observation and origin.

Hyperdoping has emerged as a promising method for designing semiconductors with unique optical and electronic properties, although such properties currently lack a clear microscopic explanation. Combining computational and experimental evidence, we probe the origin of sub-band-gap optical absorption and metallicity in Se-hyperdoped Si. We show that sub-band-gap absorption arises from direct defect-to-conduction-band transitions rather than free carrier absorption.

Light-induced water oxidation at silicon electrodes functionalized with a cobalt oxygen-evolving catalyst.

Integrating a silicon solar cell with a recently developed cobalt-based water-splitting catalyst (Co-Pi) yields a robust, monolithic, photo-assisted anode for the solar fuels process of water splitting to O(2) at neutral pH. Deposition of the Co-Pi catalyst on the Indium Tin Oxide (ITO)-passivated p-side of a np-Si junction enables the majority of the voltage generated by the solar cell to be utilized for driving the water-splitting reaction. Operation under neutral pH conditions fosters enhanced stability of the anode as compared to operation under alkaline conditions (pH 14) for which long-term stability is much more problematic.

Insulator-to-metal transition in sulfur-doped silicon.

We observe an insulator-to-metal transition in crystalline silicon doped with sulfur to nonequilibrium concentrations using ion implantation followed by pulsed-laser melting and rapid resolidification. This insulator-to-metal transition is due to a dopant known to produce only deep levels at equilibrium concentrations. Temperature-dependent conductivity and Hall effect measurements for temperatures T>1.