Charge optimized many-body (COMB) potential for dynamical simulation of Ni-Al phases.

An interatomic potential for the Ni-Al system is presented within the third-generation charge optimized many-body (COMB3) formalism. The potential has been optimized for Ni3Al, or the γ' phase in Ni-based superalloys. The formation energies predicted for other Ni-Al phases are in reasonable agreement with first-principles results.

Filling of hole arrays with InAs quantum dots.

Focused ion beams are used to pattern GaAs(001) surfaces with an array of nanometer-deep holes upon which deposition of InAs results in quantum dot formation at the hole location. Experiments show that the size and quantity of quantum dots formed depend on growth parameters, and ion dose, which affects the size and shape of the resulting holes. Quantum dots fabricated in this fashion have a photoluminescence peak at 1.