Does Institutional Quality Matter for Foreign Direct Investment and Human Development?

This study examines the relationship between foreign direct investment (FDI), institutional quality and human development) in host countries from 2002 to 2019, using the Human Development Index [HDI] as the measure of human development. This study utilized a panel dataset of 143 countries, including both developed and developing economies, over a 17-year period. Additionally, the study employed a GMM (generalized method of moments) estimator to address unobservable heterogeneity and simultaneity.

Ultraclean Single Photon Emission from a GaN Quantum Dot.

Wide bandgap III-nitride quantum dots (QDs) are promising materials for the realization of solid-state single-photon sources, especially operating at room temperature. However, so far a large degree of inhomogeneous broadening induced by spectral diffusion has compromised their use. Here, we demonstrate the ultraclean emission from single GaN QDs formed at macrostep edges in a GaN/AlGaN quantum well.

Quantum dot-like excitonic behavior in individual single walled-carbon nanotubes.

Semiconducting single-walled carbon nanotubes are one-dimensional materials with great prospects for applications such as optoelectronic and quantum information devices. Yet, their optical performance is hindered by low fluorescent yield. Highly mobile excitons interacting with quenching sites are attributed to be one of the main non-radiative decay mechanisms that shortens the exciton lifetime.

Surface-Effect-Induced Optical Bandgap Shrinkage in GaN Nanotubes.

We investigate nontrivial surface effects on the optical properties of self-assembled crystalline GaN nanotubes grown on Si substrates. The excitonic emission is observed to redshift by ∼100 meV with respect to that of bulk GaN. We find that the conduction band edge is mainly dominated by surface atoms, and that a larger number of surface atoms for the tube is likely to increase the bandwidth, thus reducing the optical bandgap.

Probing the excitonic states of site-controlled GaN nanowire quantum dots.

We report the detection of fully confined excited states and the zero-absorption region of individual site-controlled GaN/AlGaN nanowire quantum dots using photoluminescence excitation spectroscopy, which provides evidence of the true zero-dimensional discrete density of states of such quantum dots. Because of the strong quantum confinement in these dots, the p-shell, d-shell, and even higher energy (including some f-shell) states of a single quantum dot are observed, which provides unprecedented insight into the electronic structure. Several emitters are measured and used to build up an average picture of the electronic structure of a single quantum dot via comparison to theoretical simulations.

Room-temperature triggered single photon emission from a III-nitride site-controlled nanowire quantum dot.

We demonstrate triggered single photon emission at room temperature from a site-controlled III-nitride quantum dot embedded in a nanowire. Moreover, we reveal a remarkable temperature insensitivity of the single photon statistics, and a g((2))[0] value at 300 K of just 0.13.

Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks.

Semiconductor nanopyramids (NPs) provide advantages in the development of novel functional optoelectronic devices due to their unique size-dependent properties. Here we demonstrate a new method for the fabrication of selectively self-assembled single-crystalline GaN NPs on the m-plane of periodically strained GaN/InGaN multiquantum disks embedded in the middle of GaN nanorods. The GaN NPs, which have ~100 nm diameters and heights, are observed by scanning electron microscopy and their crystalline structure is confirmed by high-resolution transmission electron microscopy.

GaN nanorods grown on Si (111) substrates and exciton localization.

We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved photoluminescence measurements. The temperature dependence of the photoluminescence has been measured, and several phonon replicas have been observed at the lower energy side of the exciton bound to basal stacking faults (I1). By analyzing the Huang-Rhys parameters as a function of temperature, deduced from the phonon replica intensities, we have found that the excitons are strongly localized in the lower energy tails.

Quantum confined Stark effect of InGaN/GaN multi-quantum disks grown on top of GaN nanorods.

We have investigated, using micro-photoluminescence, the quantum confined Stark effect in an In(x)Ga(1-x)N/GaN multi-quantum disk structure at the tip of a single GaN nanorod. A strong and sharp emission line from the In(x)Ga(1-x)N/GaN quantum disks near 3.26 eV was observed.

Cavity Enhancement of Single Quantum Dot Emission in the Blue.

Cavity-enhanced single-photon emission in the blue spectral region was measured from single InGaN/GaN quantum dots. The low-Q microcavities used were characterized using micro-reflectance spectroscopy where the source was the enhanced blue output from a photonic crystal fibre. Micro-photoluminescence was observed from several cavities and found to be ~10 times stronger than typical InGaN quantum dot emission without a cavity.