The selective deposition of polymer thin films can be achieved via spin coating by manipulating interfacial interactions. While this "spin dewetting" approach sometimes generates spatial localization on topographic and chemical patterns, the connection between material selection, process parameters, and resulting film characteristics remains poorly understood. Here, we demonstrate that accurate control over these parameters allows incomplete trichlorosilane self-assembled monolayers (SAMs) to induce spin dewetting on both homogeneous (SiO) and heterogeneous (Cu/SiO or TiN/SiO) surfaces.
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