Publications by authors named "Mark Cappuzzo"

Future optical communication systems will exploit increasingly wide optical wavelength bands to continue scaling capacity per installed fiber. Currently, optical components such as tunable lasers and modulators are designed to operate in a single wavelength band only and multiple designs are therefore needed for a single system. Improved tunable lasers operating seamlessly over these wider bands would both simplify system deployment and management.

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Resistive switching (RS) of Transition Metal Oxides (TMOs) has become not only an attractive choice for the development of next generation non-volatile memory, but also as a suitable family of materials capable of supporting high-frequency and high-speed switching needed for the next generation wireless communication technologies, such as 6G. The exact mechanism of RS is not yet clearly understood; however, it is widely accepted to be related to the formation and rupture of sub-stoichiometric conductive filaments (Magnéli phases) of the respective oxides upon activation. Here, we examine the switching behaviour of amorphous TiO and NiO both under the DC regime and in the high frequency mode.

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We demonstrate free-space space-division-multiplexing (SDM) with 15 orbital angular momentum (OAM) states using a three-dimensional (3D) photonic integrated circuit (PIC). The hybrid device consists of a silica planar lightwave circuit (PLC) coupled to a 3D waveguide circuit to multiplex/demultiplex OAM states. The low excess loss hybrid device is used in individual and two simultaneous OAM states multiplexing and demultiplexing link experiments with a 20 Gb/s, 1.

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