Publications by authors named "Mark A Fanton"
We present a novel method for the direct metal-free growth of graphene on sapphire that yields high quality films comparable to that of graphene grown on SiC by sublimation. Graphene is synthesized on sapphire via the simple decomposition of methane at 1425-1600 °C. Film quality was found to be a strong function of growth temperature.
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- There is a strong connection between how mobile carriers are in epitaxial graphene and its Raman topography when grown on silicon carbide.
- The Hall mobility varies significantly based on the thickness of the graphene and the uniformity of strain in the monolayer.
- High mobility of 18,100 cm²/(V s) at room temperature is achieved, and this mobility is greatly affected by the stacking arrangement of the graphene layers.
We report results of Raman spectroscopy studies of large-area epitaxial graphene grown on SiC. Our work reveals unexpectedly large variation in Raman shift resulting from graphene strain inhomogeneity, which is shown to be correlated with physical topography by coupling Raman spectroscopy with atomic force microscopy. We show that graphene strain can vary over a distance shorter than 300 nm and may be uniform only over roughly 1 microm.
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