Wafer-scale nanofabrication of sub-100 nm arrays by deep-UV displacement Talbot lithography.

In this manuscript, we demonstrate the potential of replacing the standard bottom anti-reflective coating (BARC) with a polymethylglutarimide (PMGI) layer for wafer-scale nanofabrication by means of deep-UV displacement talbot lithography (DTL). PMGI is functioning as a developable non-UV sensitive bottom anti-reflective coating (DBARC). After introducing the fabrication process using a standard BARC-based coating and the novel PMGI-based one, the DTL nanopatterning capabilities for both coatings are compared by means of the fabrication of etched nanoholes in a dielectric layer and metal nanodots made by lift-off.

III-V nanowire synthesis by use of electrodeposited gold particles.

Semiconductor nanowires are great candidates for building novel electronic devices. Considering the cost of fabricating such devices, substrate reuse and gold consumption are the main concerns. Here we report on implementation of high throughput gold electrodeposition for selective deposition of metal seed particles in arrays defined by lithography for nanowire synthesis.

Enhanced anisotropic effective g factors of an Al0.25Ga0.75N/GaN heterostructure based quantum point contact.

Gate-defined quantum point contacts (QPCs) were fabricated with Al0.25Ga0.75N/GaN heterostructures grown by metal-organic chemical vapor deposition (MOCVD).