Test Structure Design for Defect Detection during Active Thermal Cycling.

Integrated power ICs acting as smart power switches for automotive or industrial applications are often subjected to active thermal cycling. Consequently, they undergo significant self-heating and are prone to various failure mechanisms related to the electro-thermo-mechanical phenomena that take place in the device metallization. In this article a test structure consisting of a lateral DMOS transistor equipped with several integrated sensors is proposed for metallization fatigue assessment.