Area-selective atomic layer deposition of Ru on electron-beam-written Pt(C) patterns versus SiO substratum.

Area selectivity is an emerging sub-topic in the field of atomic layer deposition (ALD), which employs opposite nucleation phenomena to distinct heterogeneous starting materials on a surface. In this paper, we intend to grow Ru exclusively on locally pre-defined Pt patterns, while keeping a SiO substratum free from any deposition. In a first step, we study in detail the Ru ALD nucleation on SiO and clarify the impact of the set-point temperature.

Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions.

Germanium is a promising material for future very large scale integration transistors, due to its superior hole mobility. However, germanium-based devices typically suffer from high reverse junction leakage due to the low band-gap energy of 0.66 eV and therefore are characterized by high static power dissipation.