Semiempirical Two-Dimensional Model of the Bipolar Resistive Switching Process in Si-NCs/SiO Multilayers.

In this work, the SET and RESET processes of bipolar resistive switching memories with silicon nanocrystals (Si-NCs) embedded in an oxide matrix is simulated by a stochastic model. This model is based on the estimation of two-dimensional oxygen vacancy configurations and their relationship with the resistive state. The simulation data are compared with the experimental current-voltage data of Si-NCs/SiO2 multilayer-based memristor devices.

Digital and Analog Resistive Switching Behavior in Si-NCs Embedded in a Si/SiO Multilayer Structure for Neuromorphic Systems.

In this work, we report the digital and analog resistive-switching (RS) characteristics in a memristor based on silicon nanocrystals (Si-NCs) integrated into a complementary metal-oxide-semiconductor (MOS) structure. Si-NCs with a diameter of 5.48 ± 1.

Development of Heterojunction c-Si/a-SiC:H PIN Light-Emitting Diodes.

In this work, we explored the feasibility of the fabrication of PIN light-emitting diodes (LEDs) consisting of heterojunctions of amorphous silicon-carbide (a-SiC:H) thin films and crystalline silicon wafers (c-Si). The objective is the future development of electro-photonic systems in the same c-Si wafer, containing transistors, sensors, LEDs and waveguides. Two different heterojunction LEDs were fabricated consisting of PIN and PINN structures, where a-SiC:H thin films were used as P-type and I-type layers, while an N-type c-Si substrate was used as an active part of the device.

Solar Cell Parameter Extraction Method from Illumination and Dark I-V Characteristics.

A novel method to extract the seven parameters of the double-diode model of solar cells using the current-voltage (I-V) characteristics under illumination and in the dark is presented. The algorithm consists of two subroutines which are alternatively run to adjust all the parameters of the cell in an iterative process. Curve fitting of the light I-V characteristics ensures accuracy in the prediction of the maximum power point, whereas simultaneously fitting the dark I-V characteristics results in a set of physically meaningful parameters that provide information about the physical performance of the photovoltaic devices.

Effect of the Graded Silicon Content in SRN/SRO Multilayer Structures on the Si Nanocrystals and Si Nanopyramids Formation and Their Photoluminescence Response.

Two multilayer (ML) structures, composed of five layers of silicon-rich oxide (SRO) with different Si contents and a sixth layer of silicon-rich nitride (SRN), were deposited by low pressure chemical vapor deposition. These SRN/SRO MLs were thermally annealed at 1100 °C for 180 min in ambient N to induce the formation of Si nanostructures. For the first ML structure (MLA), the excess Si in each SRO layer was about 10.

Exploring a Novel Multiple-Query Resistive Grid-Based Planning Method Applied to High-DOF Robotic Manipulators.

The applicability of the path planning strategy to robotic manipulators has been an exciting topic for researchers in the last few decades due to the large demand in the industrial sector and its enormous potential development for space, surgical, and pharmaceutical applications. The automation of high-degree-of-freedom (DOF) manipulator robots is a challenging task due to the high redundancy in the end-effector position. Additionally, in the presence of obstacles in the workspace, the task becomes even more complicated.