Ge/Al and Ge/SiN/Al Core/Shell Quantum Dot Lattices in Alumina: Boosting the Spectral Response by Tensile Strain.

We investigated the production conditions and optoelectrical properties of thin film material consisting of regularly ordered core/shell Ge/Al and Ge/SiN/Al quantum dots (QDs) in an alumina matrix. The materials were produced by self-assembled growth achieved by means of multilayer magnetron sputtering deposition. We demonstrated the successful fabrication of well-ordered 3D lattices of Ge/Al and Ge/SiN/Al core/shell quantum dots with a body-centred tetragonal arrangement within the AlO matrix.

Multiple Exciton Generation in 3D-Ordered Networks of Ge Quantum Wires in Alumina Matrix.

Thin films containing 3D-ordered semiconductor quantum wires offer a great tool to improve the properties of photosensitive devices. In the present work, we investigate the photo-generated current in thin films consisting of an interconnected 3D-ordered network of Ge quantum wires in an alumina matrix. The films are prepared using nitrogen-assisted magnetron sputtering co-deposition of Ge and AlO.

3D Networks of Ge Quantum Wires in Amorphous Alumina Matrix.

Recently demonstrated 3D networks of Ge quantum wires in an alumina matrix, produced by a simple magnetron sputtering deposition enables the realization of nanodevices with tailored conductivity and opto-electrical properties. Their growth and ordering mechanisms as well as possibilities in the design of their structure have not been explored yet. Here, we investigate a broad range of deposition conditions leading to the formation of such quantum wire networks.

Deposition of Thin Alumina Films Containing 3D Ordered Network of Nanopores on Porous Substrates.

Self-supporting thin films containing nanopores are very promising materials for use for multiple applications, especially in nanofiltration. Here, we present a method for the production of nanomembranes containing a 3D ordered network of nanopores in an alumina matrix, with a diameter of about 1 nm and a body centered tetragonal structure of the network nodes. The material is produced by the magnetron sputtering deposition of a 3D ordered network of Ge nanowires in an alumina matrix, followed by a specific annealing process resulting in the evaporation of Ge.