Highly uniform zinc blende GaAs nanowires on Si(111) using a controlled chemical oxide template.

GaAs-based nanowires (NWs) can be grown without extrinsic catalyst using the Ga-assisted vapor-liquid-solid method in an epitaxy reactor, on Si(111) substrates covered with native oxide. Despite its wide use, the conventional method fails to provide a good control over uniformity, reproducibility, and yield of vertical NWs. The nucleation of GaAs NWs is very sensitive to the properties of the native oxide such as chemical composition, roughness and porosity.

Determination of the Optimal Shell Thickness for Self-Catalyzed GaAs/AlGaAs Core-Shell Nanowires on Silicon.

We present a set of experimental results showing a combination of various effects, that is, surface recombination velocity, surface charge traps, strain, and structural defects, that govern the carrier dynamics of self-catalyzed GaAs/AlGaAs core-shell nanowires (NWs) grown on a Si(111) substrate by molecular beam epitaxy. Time-resolved photoluminescence of NW ensemble and spatially resolved cathodoluminescence of single NWs reveal that emission intensity, decay time, and carrier diffusion length of the GaAs NW core strongly depend on the AlGaAs shell thickness but in a nonmonotonic fashion. Although 7 nm AlGaAs shell can efficiently suppress the surface recombination velocity of the GaAs NW core, the influence of the surface charge traps and the strain between the core and the shell that redshift the luminescence of the GaAs NW core remain observable in the whole range of the shell thickness.

Strained GaAs/InGaAs Core-Shell Nanowires for Photovoltaic Applications.

We report on the successful growth of strained core-shell GaAs/InGaAs nanowires on Si (111) substrates by molecular beam epitaxy. The as-grown nanowires have a density in the order of 10(8) cm(-2), length between 3 and 3.5 μm, and diameter between 60 and 160 nm, depending on the shell growth duration.

Lasing in Bose-Fermi mixtures.

Light amplification by stimulated emission of radiation, well-known for revolutionising photonic science, has been realised primarily in fermionic systems including widely applied diode lasers. The prerequisite for fermionic lasing is the inversion of electronic population, which governs the lasing threshold. More recently, bosonic lasers have also been developed based on Bose-Einstein condensates of exciton-polaritons in semiconductor microcavities.

Atomistic simulations of the optical absorption of type-II CdSe/ZnTe superlattices.

We perform accurate tight binding simulations to design type-II short-period CdSe/ZnTe superlattices suited for photovoltaic applications. Absorption calculations demonstrate a very good agreement with optical results with threshold strongly depending on the chemical species near interfaces.

Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe.

The existence of intrinsic carrier interface states in heterostructures with no common atom at the interface (such as ZnSe/BeTe) is shown experimentally by ellipsometry and photoluminescence spectroscopy. These states are located on interfaces and lie inside the effective bandgap of the structure; they are characterized by a high density and a long lifetime. A tight binding model confirms theoretically the existence of these states in ZnSe/BeTe heterostructures for a ZnTe-type interface, in contrast to the case of the BeSe-type interface for which they do not exist.

Optical spin orientation of a single manganese atom in a semiconductor quantum dot using quasiresonant photoexcitation.

An optical spin orientation is achieved for a Mn atom localized in a semiconductor quantum dot using quasiresonant excitation at zero magnetic field. Optically created spin-polarized carriers generate an energy splitting of the Mn spin and enable magnetic moment orientation controlled by the photon helicity and energy. The dynamics and the magnetic field dependence of the optical pumping mechanism show that the spin lifetime of an isolated Mn atom at zero magnetic field is controlled by a magnetic anisotropy induced by the built-in strain in the quantum dots.

Motional enhancement of exciton magnetic moments in zinc-blende semiconductors.

We report a remarkable enhancement of the magnetic moments of excitons as a result of their motion. This surprising result, which we have observed in magneto-optical studies of three distinct zinc-blende semiconductors, GaAs, CdTe, and ZnSe, becomes significant as the kinetic energy of the exciton becomes comparable with its Rydberg energy and is attributed to motionally induced changes in the internal structure of the exciton. The enhancement of the magnetic moment as a function of the exciton translational wave vector can be represented by a universal equation.

Electrical control of a single Mn atom in a quantum dot.

We report on the reversible electrical control of the magnetic properties of a single Mn atom in an individual quantum dot. Our device permits us to prepare the dot in states with three different electric charges, 0, +1e, and -1e which result in dramatically different spin properties, as revealed by photoluminescence. Whereas in the neutral configuration the quantum dot is paramagnetic, the electron-doped dot spin states are spin rotationally invariant and the hole-doped dot spins states are quantized along the growth direction.

Geometrical effects on the optical properties of quantum dots doped with a single magnetic atom.

The emission spectra of individual self-assembled quantum dots containing a single magnetic Mn atom differ strongly from dot to dot. The differences are explained by the influence of the system geometry, specifically the in-plane asymmetry of the quantum dot and the position of the Mn atom. Depending on both these parameters, one has different characteristic emission features which either reveal or hide the spin state of the magnetic atom.

Probing the spin state of a single magnetic ion in an individual quantum dot.

The magnetic state of a single magnetic ion (Mn2+) embedded in an individual quantum dot is optically probed using microspectroscopy. The fine structure of a confined exciton in the exchange field of a single Mn2+ ion (S=5/2) is analyzed in detail. The exciton-Mn2+ exchange interaction shifts the energy of the exciton depending on the Mn2+ spin component and six emission lines are observed at zero magnetic field.

Low-temperature near-field spectroscopy of CdTe quantum dots.

A near-field optical microscope has been developed for operation at low temperature. This microscope is used to study the photoluminescence of CdTe-based quantum dots. Spectra collected upon approaching the optical tip into the near-field region of the sample reveal the evolution from a broad far-field luminescence band - that is typical for a large ensemble of dots - to a near-field structure made up of a few sharp peaks originating from individual dots.