RF performances of inductors integrated on localized p+-type porous silicon regions.

To study the influence of localized porous silicon regions on radiofrequency performances of passive devices, inductors were integrated on localized porous silicon regions, full porous silicon sheet, bulk silicon and glass substrates. In this work, a novel strong, resistant fluoropolymer mask is introduced to localize the porous silicon on the silicon wafer. Then, the quality factors and resonant frequencies obtained with the different substrates are presented.

Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces.

In this paper, we study the electrochemical anodization of n-type heavily doped 4 H-SiC wafers in a HF-based electrolyte without any UV light assistance. We present, in particular, the differences observed between the etching of Si and C faces. In the case of the Si face, the resulting material is mesoporous (diameters in the range of 5 to 50 nm) with an increase of the 'chevron shaped' pore density with depth.

Evaluation of mesoporous silicon thermal conductivity by electrothermal finite element simulation.

The aim of this work is to determine the thermal conductivity of mesoporous silicon (PoSi) by fitting the experimental results with simulated ones. The electrothermal response (resistance versus applied current) of differently designed test lines integrated onto PoSi/silicon substrates and the bulk were compared to the simulations. The PoSi thermal conductivity was the single parameter used to fit the experimental results.

Plasma-deposited fluoropolymer film mask for local porous silicon formation.

The study of an innovative fluoropolymer masking layer for silicon anodization is proposed. Due to its high chemical resistance to hydrofluoric acid even under anodic bias, this thin film deposited by plasma has allowed the formation of deep porous silicon regions patterned on the silicon wafer. Unlike most of other masks, fluoropolymer removal after electrochemical etching is rapid and does not alter the porous layer.