Publications by authors named "Marie Angelopoulos"
Moisture absorption in model photoresist films of poly(4-hydroxystryene) (PHOSt) and poly(tert-butoxycarboxystyrene) (PBOCSt) supported on silicon wafers was measured by X-ray and neutron reflectivity. The overall thickness change in the films upon moisture exposure was found to be dependent upon the initial film thickness. As the film becomes thinner, the swelling is enhanced.
View Article and Find Full Text PDFNear-edge X-ray absorption fine structure spectroscopy (NEXAFS) is utilized to provide insight into surface chemical effects in model photoresist films. First, NEXAFS was used to examine the resist/air interface including surface segregation of a photoacid generator (PAG) and the extent of surface deprotection in the film. The concentration of PAG at the resist-air interface was higher than the bulk concentration, which led to a faster deprotection rate at that interface.
View Article and Find Full Text PDFArticle Synopsis
- The semiconductor industry aims to produce smaller structures using photolithography, requiring precise dimensional control at the scale of polymer molecules in photoresists.
- Current technologies, like chemically amplified photoresists, struggle with controlling the reaction-diffusion process due to the inability to measure the reaction front directly.
- Researchers demonstrate that x-ray and neutron reflectometry can provide nanometer-level measurements of the reaction front, revealing a broad composition profile and showing how the developed film structure changes during processing.