Publications by authors named "Mariam M Quarshie"

Direct current plasma enhanced chemical vapor deposition (CVD) was employed to create polycrystalline diamond films from CH/Hgaseous mixture at 98 mbar pressure and various substrate temperatures between 720 °C and 960 °C. The Si chips with patterns of periodic masked and open seeded zones were used as substrates. The mask free seeded areas evolved into polycrystalline diamond films after CVD process.

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