Electrical Characteristics of CMOS-Compatible SiO-Based Resistive-Switching Devices.

The electrical characteristics and resistive switching properties of memristive devices have been studied in a wide temperature range. The insulator and electrode materials of these devices (silicon oxide and titanium nitride, respectively) are fully compatible with conventional complementary metal-oxide-semiconductor (CMOS) fabrication processes. Silicon oxide is also obtained through the low-temperature chemical vapor deposition method.

Stochastic Memristive Interface for Neural Signal Processing.

We propose a memristive interface consisting of two FitzHugh-Nagumo electronic neurons connected via a metal-oxide (Au/Zr/ZrO(Y)/TiN/Ti) memristive synaptic device. We create a hardware-software complex based on a commercial data acquisition system, which records a signal generated by a presynaptic electronic neuron and transmits it to a postsynaptic neuron through the memristive device. We demonstrate, numerically and experimentally, complex dynamics, including chaos and different types of neural synchronization.