Publications by authors named "Maria Losurdo"

The gallium monochalcogenides family, comprising gallium sulfide (GaS), gallium selenide (GaSe), and gallium telluride (GaTe), is capturing attention for its applications in energy storage and production, catalysis, photonics, and optoelectronics. This interest originates from their properties, which include an optical bandgap larger than those of most common transition metal dichalcogenides, efficient light absorption, and significant carrier mobility. For any application, stability to air exposure is a fundamental requirement.

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Article Synopsis
  • Phase Change Materials (PCMs) offer exciting possibilities for micro-nanophotonic devices that can adapt and function across a wide range of light frequencies, from terahertz to visible light.
  • The review highlights various ways to optimize PCM device configurations, including innovative techniques like deep learning for designing metasurfaces.
  • Potential applications of PCMs span multiple fields, including memory storage, energy harvesting, biomedical tech, and flexible electronics, making them a versatile tool for future technology development.
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Among semiconductor metal oxides, that are an important class of sensing materials, titanium dioxide (TiO) thin films are widely employed as sensors because of their high chemical and mechanical stability in harsh environments, non-toxicity, eco-compatibility, and photocatalytic properties. TiO-based chemical oxygen demand (COD) sensors exploit the photocatalytic properties of TiO in inducing the oxidation of organic compounds to CO. In this work, we discuss nanostructured TiO thin films grown via low-pressure metal organic chemical vapor deposition (MOCVD) on metallic AISI 316 mesh.

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All-dielectric metasurfaces are a blooming field with a wide range of new applications spanning from enhanced imaging to structural color, holography, planar sensors, and directionality scattering. These devices are nanopatterned structures of sub-wavelength dimensions whose optical behavior (absorption, reflection, and transmission) is determined by the dielectric composition, dimensions, and environment. However, the functionality of these metasurfaces is fixed at the fabrication step by the geometry and optical properties of the dielectric materials, limiting their potential as active reconfigurable devices.

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Hot-carrier based photodetectors and enhanced by surface plasmons (SPs) hot-electron injection into semiconductors, are drawing significant attention. This photodetecting strategy yields to narrowband photoresponse while enabling photodetection at sub-bandgap energies of the semiconductor materials. In this work, we analyze the design of a reconfigurable photodetector based on a metal-semiconductor (MS) configuration with interdigitated dual-comb Au electrodes deposited on the semiconducting SbS phase-change material.

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Article Synopsis
  • Interest in gallium monosulfide (GaS) is increasing because it has a unique band gap that fits between 2D transition metal dichalcogenides and insulating materials, making it promising for various applications.
  • The study combines theoretical and experimental methods to investigate the dielectric function of crystalline 2H-GaS, utilizing techniques like spectroscopic imaging ellipsometry and first principle calculations.
  • The findings help to validate GaS's optical properties, providing valuable insights for developing new optoelectronic and photonic devices leveraging this low-dimensional material.
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Antimony sulfide, SbS, is interesting as the phase-change material for applications requiring high transmission from the visible to telecom wavelengths, with its band gap tunable from 2.2 to 1.6 eV, depending on the amorphous and crystalline phase.

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We have synthetized two classes of dibenzofulvene-arylamino derivatives with an H-shape design, for a total of six different molecules. The molecular structures consist of two D-A-D units connected by a thiophene or bitiophene bridge, using diarylamino substituents as donor groups anchored to the 2,7- (Group A) and 3,6- (Group B) positions of the dibenzofulvene backbone. The donor units and the thiophene or bithiophene bridges were used as chemico-structural tools to modulate electro-optical and morphological-electrical properties.

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From the group-III monochalcogenide (MX, M  =  Ga, In; X  =  S, Se, Te) layered semiconductors, gallium monosulfide, GaS, has emerged as a promising material for electronics, optoelectronics, and catalysis applications. In this work, GaS samples of various thicknesses in the range from 38 to 1665 nm have been obtained by mechanical exfoliation to study the interplay between structural, morphological, optical, and photoresponsivity properties as a function of thickness. This interplay has been established by analyzing the structure through Raman spectroscopy and X-ray diffraction, the morphology through scanning electron microscopy and atomic force microscopy, the density and optical properties through spectroscopic ellipsometry, and the photoresponsivity through current-voltage measurements under UV light.

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Group III layered monochalcogenide gallium sulfide, GaS, is one of the latest additions to the two-dimensional (2D) materials family, and of particular interest for visible-UV optoelectronic applications due to its wide bandgap energy in the range 2.35-3.05 eV going from bulk to monolayer.

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In this work we report the local growth of ordered arrays of 3D core-shell chiral nanohelices based on plasmonic gallium metal. The structures can be engineered in a single step using focused ion beam induced deposition, where a Ga ion source is used to shape the metallic nanohelix core, while the dielectric precursor is dissociated to create dielectric shells. The solubility of gallium in the different investigated dielectric matrices controls the core-shell thickness ratio of the nanohelices.

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Hydrogen is the key element to accomplish a carbon-free based economy. Here, the first evidence of plasmonic gallium (Ga) nanoantennas is provided as nanoreactors supported on sapphire (α-Al O ) acting as direct plasmon-enhanced photocatalyst for hydrogen sensing, storage, and spillover. The role of plasmon-catalyzed electron transfer between hydrogen and plasmonic Ga nanoparticle in the activation of those processes is highlighted, as opposed to conventional refractive index-change-based sensing.

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Sulfur hexafluoride (SF) is one of the most harmful greenhouse gases producing environmental risks. Therefore, developing ways of degrading SF without forming hazardous products is increasingly important. Herein, we demonstrate for the first time the plasmon-catalytic heterogeneous degradation of SF into nonhazardous MgF and MgSO products by nontoxic and sustainable plasmonic magnesium/magnesium oxide (Mg/MgO) nanoparticles, which are also effective as a plasmon-enhanced SF chemometric sensor.

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Magnesium-based films and nanostructures are being studied in order to improve hydrogen reversibility, storage capacity, and kinetics, because of their potential in the hydrogen economy. Some challenges with magnesium (Mg) samples are their unavoidable oxidation by air exposure and lack of direct in situ real time measurements of hydrogen interaction with Mg and MgO surfaces and Mg plasmonic nanoparticles. Given these challenges, the present article investigates direct interaction of Mg with hydrogen, as well as implications of its inevitable oxidation by real-time spectroscopic ellipsometry for exploiting the optical properties of Mg, MgH and MgO.

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Gallium (Ga), a group III metal, is of fundamental interest due to its polymorphism and unusual phase transition behaviours. New solid phases have been observed when Ga is confined at the nanoscale. Herein, we demonstrate the stable coexistence, from 180 K to 800 K, of the unexpected solid γ-phase core and a liquid shell in substrate-supported Ga nanoparticles.

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A simple and facile solution-based procedure is implemented for decorating a large area, monolayer graphene film, grown by chemical vapor deposition, with size-tunable light absorbing colloidal PbS nanocrystals (NCs). The hybrid is obtained by exposing a large area graphene film to a solution of 1-pyrene butyric acid surface coated PbS NCs, obtained by a capping exchange procedure onto presynthesized organic-capped NCs. The results demonstrate that at the interface, multiple and cooperative π-π stacking interactions promoted by the pyrene ligand coordinating the NC surface lead to a successful anchoring of the nano-objects on the graphene platform which concomitantly preserves its aromatic structure.

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Gallium has recently been demonstrated as a phase-change plasmonic material offering UV tunability, facile synthesis, and a remarkable stability due to its thin, self-terminating native oxide. However, the dense irregular nanoparticle (NP) ensembles fabricated by molecular-beam epitaxy make optical measurements of individual particles challenging. Here we employ hyperspectral cathodoluminescence (CL) microscopy to characterize the response of single Ga NPs of various sizes within an irregular ensemble by spatially and spectrally resolving both in-plane and out-of-plane plasmonic modes.

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Fluorination of graphene enables tuning of its electronic properties, provided that control of the fluorination degree and of modification of graphene structure can be achieved. In this work we demonstrate that SF6 modulated plasma fluorination of monolayer graphene yields polyene-graphene hybrids. The extent of fluorination is determined by the plasma exposure time and controlled in real time by monitoring the change in the optical response by spectroscopic ellipsometry.

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Metal nanoparticle (NP)-graphene multifunctional platforms are of great interest for exploring strong light-graphene interactions enhanced by plasmons and for improving performance of numerous applications, such as sensing and catalysis. These platforms can also be used to carry out fundamental studies on charge transfer, and the findings can lead to new strategies for doping graphene. There have been a large number of studies on noble metal Au-graphene and Ag-graphene platforms that have shown their potential for a number of applications.

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Gold nanoclusters are deposited directly on silicon by sputtering of a target of metallic gold using an argon plasma to provide a semiconductor-based plasmonic platform. The effects of annealing and substrate temperatures during the nanoparticles deposition and of the silicon surface energy on the shape of the nanoparticles and resulting surface plasmon resonance are investigated. The Au nanoparticles are characterized optically, structurally and morphologically using spectroscopic ellipsometry, transmission electron microscopy and atomic force microscopy to establish a correlation among the Au/Si interface reactivity, the Au nanoparticles shape and plasmonic resonance properties.

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In this work we demonstrate for the first time the micro- and nanostructuring of graphene by means of UV-nanoimprint lithography. Exfoliated graphene on SiO(2) substrates, as well as graphene deposited by chemical vapor deposition (CVD) on polycrystalline nickel and copper, and transferred CVD graphene on dielectric substrates, were used to demonstrate that our technique is suitable for large-area patterning (2 × 2 cm(2)) of graphene on various types of substrates. The demonstrated fabrication procedure of micrometer as well as nanometer-sized graphene structures with feature sizes down to 20 nm by a wafer-scale process opens up an avenue for the low-cost and high-throughput manufacturing of graphene-based optical and electronic applications.

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Graphene is emerging as a promising material for plasmonics applications due to its strong light-matter interactions, most of which are theoretically predicted but not yet experimentally realized. Therefore, the integration of plasmonic nanoparticles to create metal nanoparticle/graphene composites enables numerous phenomena important for a range of applications from photonics to catalysis. For these applications it is important to articulate the coupling of photon-based excitations such as the interaction between plasmons in each of the material components, as well as their charge-based interactions dependent upon the energy alignment at the metal/graphene interface.

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Attaching functional molecules such as thiols and proteins to semiconductor surfaces is increasingly exploited in functional devices such as sensors. Despite extensive research to understand this interface and demonstrate a robust protocol for attachment, the bonding chemistry of thiolates to III-V surfaces has been under great debate in the literature. This study provides a comprehensive chemical model for the attachment of thiols to InAs, an increasingly device-relevant III-V semiconductor, using cysteamine as a model molecule.

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