Origin of Persisting Photoresponse of One-Year Aged Two-Dimensional Lead Halide Perovskites Stored in Air under Dark Conditions.

Two-dimensional halide perovskites are promising for advanced photonic, optoelectronic, and photovoltaic applications. However, their long-term stability is still a critical factor limiting their implementation into further commercial applications. Here, we present an environmental stability analysis of BA(MA)PbI (BA = CHN, MA = CHN) two-dimensional perovskites with the lowest quantum well thicknesses of = 1 and = 2, after 1 year of aging under ambient humidity, oxygen content, and light conditions.

Is the surface of Hofmann-like spin-crossover {Fe(pz)[Pt(CN)]} the same as its bulk?

Temperature dependent X-ray photoemission spectroscopy (XPS) has been employed to examine the spin-crossover (SCO) transition in the nanocrystals of 3D Hoffman-like {Fe(pz)[Pt(CN)]}. Consistent with the existing literature, the temperature-dependent variations in the Fe 2p core-level spectrum provide unambiguous evidence of the spin-state transition in this SCO complex. One of the many possible reasons behind a lack of discernible temperature-driven shifts in the binding energies of both the N 1s core-level components could be the immunity of its HS electronic configuration to thermal fluctuations.

Surface stabilisation of the high-spin state of Fe(II) spin-crossover complexes.

Temperature dependent X-ray photoemission spectroscopy (XPS) has been employed to examine the Fe 2p and N 1s core levels of the studied Fe(II) spin crossover (SCO) complexes of interest, namely: Fe(phen)(NCS), [Fe(3-Fpy){Ni(CN)}], and [Fe(3-Fpy){Pt(CN)}]. The changes in the Fe 2p core-level spectra with temperature indicate spin state transitions in these SCO complexes, which are consistent with one's expectations and the existing literature. Additionally, the temperature dependence of the binding energy of the N 1s core-level provides further physical insights into the ligand-to-metal charge transfer phenomenon in these molecules.

Chiral photocurrent in a Quasi-1D TiS(001) phototransistor.

The presence of in-plane chiral effects, hence spin-orbit coupling, is evident in the changes in the photocurrent produced in a TiS(001) field-effect phototransistor with left versus right circularly polarized light. The direction of the photocurrent is protected by the presence of strong spin-orbit coupling and the anisotropy of the band structure as indicated in NanoARPES measurements. Dark electronic transport measurements indicate that TiSis n-type and has an electron mobility in the range of 1-6 cmVs.

Strain and Spin-Orbit Coupling Engineering in Twisted WS/Graphene Heterobilayer.

The strain in hybrid van der Waals heterostructures, made of two distinct two-dimensional van der Waals materials, offers an interesting handle on their corresponding electronic band structure. Such strain can be engineered by changing the relative crystallographic orientation between the constitutive monolayers, notably, the angular misorientation, also known as the "twist angle". By combining angle-resolved photoemission spectroscopy with density functional theory calculations, we investigate here the band structure of the WS/graphene heterobilayer for various twist angles.

Spatial Control of Charge Doping in n-Type Topological Insulators.

Spatially controlling the Fermi level of topological insulators and keeping their electronic states stable are indispensable processes to put this material into practical use for semiconductor spintronics devices. So far, however, such a method has not been established yet. Here we show a novel method for doping a hole into n-type topological insulators BiX (X= Se, Te) that overcomes the shortcomings of the previous reported methods.

Atomic Layer Deposition of a Nanometer-Thick LiPO Protective Layer on LiNiMnO Films: Dream or Reality for Long-Term Cycling?

LiNiMnO (LNMO) is a promising 5V-class electrode for Li-ion batteries but suffers from manganese dissolution and electrolyte decomposition owing to the high working potential. An attractive solution to stabilize the surface chemistry consists in mastering the interface between the LNMO electrode and the liquid electrolyte with a surface protective layer made from the powerful surface deposition method. Here, we show that a 7400 nm thick sputtered LNMO film coated with a nanometer-thick lithium-ion-conductive LiPO layer was deposited by the atomic layer deposition method.

Effect of Band Symmetry on Photocurrent Production in Quasi-One-Dimensional Transition-Metal Trichalcogenides.

Photocurrent production in quasi-one-dimensional (1D) transition-metal trichalcogenides, TiS(001) and ZrS(001), was examined using polarization-dependent scanning photocurrent microscopy. The photocurrent intensity was the strongest when the excitation source was polarized along the 1D chains with dichroic ratios of 4:1 and 1.2:1 for ZrS and TiS, respectively.

Layer-controlled single-crystalline graphene film with stacking order via Cu-Si alloy formation.

Multilayer graphene and its stacking order provide both fundamentally intriguing properties and technological engineering applications. Several approaches to control the stacking order have been demonstrated, but a method of precisely controlling the number of layers with desired stacking sequences is still lacking. Here, we propose an approach for controlling the layer thickness and crystallographic stacking sequence of multilayer graphene films at the wafer scale via Cu-Si alloy formation using direct chemical vapour deposition.

The electronic band structure of quasi-one-dimensional van der Waals semiconductors: the effective hole mass of ZrS compared to TiS.

The band structure of the quasi-one-dimensional transition metal trichalcogenide ZrS(001) was investigated using nanospot angle resolved photoemission spectroscopy (nanoARPES) and shown to have many similarities with the band structure of TiS(001). We find that ZrS, like TiS, is strongly n-type with the top of the valence band ∼1.9 eV below the Fermi level, at the center of the surface Brillouin zone.

Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene.

The properties of van der Waals (vdW) materials often vary dramatically with the atomic stacking order between layers, but this order can be difficult to control. Trilayer graphene (TLG) stacks in either a semimetallic ABA or a semiconducting ABC configuration with a gate-tunable band gap, but the latter has only been produced by exfoliation. Here we present a chemical vapor deposition approach to TLG growth that yields greatly enhanced fraction and size of ABC domains.

Environmental Control of Charge Density Wave Order in Monolayer 2H-TaS.

For quasi-freestanding 2H-TaS in monolayer thickness grown by molecular beam epitaxy on graphene on Ir(111), we find unambiguous evidence for a charge density wave close to a 3 × 3 periodicity. Using scanning tunneling spectroscopy, we determine the magnitude of the partial charge density wave gap. Angle-resolved photoemission spectroscopy, complemented by scanning tunneling spectroscopy for the unoccupied states, makes a tight-binding fit for the band structure of the TaS monolayer possible.

The Role of Oxygen Atoms on Excitons at the Edges of Monolayer WS.

We clarify that the chemisorption of oxygen atoms at the edges is a key contributor to the frequently observed edge enhancement and spatial non-uniformities of photoluminescence (PL) in WS monolayers. Here we have investigated with momentum- and real-space nanoimaging of the chemical and electronic density inhomogeneity of WS flakes. Our finding from a large panoply of techniques together with density functional theory calculation confirms that the oxygen chemisorption leads to the electron accumulation at the edges.

Nanomosaic of Topological Dirac States on the Surface of PbBiSe Observed by Nano-ARPES.

We have performed scanning angle-resolved photoemission spectroscopy with a nanometer-sized beam spot (nano-ARPES) on the cleaved surface of PbBiSe, which is a member of the (PbSe)(BiSe) homologous series (PSBS) with m = 4 consisting of alternate stacking of the topologically trivial insulator PbSe bilayer and four quintuple layers (QLs) of the topological insulator BiSe. This allows us to visualize a mosaic of topological Dirac states at a nanometer scale coming from the variable thickness of the BiSe nanoislands (1-3 QLs) that remain on top of the PbSe layer after cleaving the PSBS crystal, because the local band structure of topological origin changes drastically with the thickness of the BiSe nanoislands. A comparison of the local band structure with that in ultrathin BiSe films on Si(111) gives us further insights into the nature of the observed topological states.

Visualizing the Effect of an Electrostatic Gate with Angle-Resolved Photoemission Spectroscopy.

Electrostatic gating is pervasive in materials science, yet its effects on the electronic band structure of materials has never been revealed directly by angle-resolved photoemission spectroscopy (ARPES), the technique of choice to noninvasively probe the electronic band structure of a material. By means of a state-of-the-art ARPES setup with submicron spatial resolution, we have investigated a heterostructure composed of Bernal-stacked bilayer graphene (BLG) on hexagonal boron nitride and deposited on a graphite flake. By voltage biasing the latter, the electric field effect is directly visualized on the valence band as well as on the carbon 1s core level of BLG.

Gate-Controlled Metal-Insulator Transition in TiS Nanowire Field-Effect Transistors.

We explore the electrical characteristics of TiS nanowire field-effect transistor (FETs), over the wide temperature range from 3 to 350 K. These nanomaterials have a quasi-one-dimensional (1D) crystal structure and exhibit a gate-controlled metal-insulator transition (MIT) in their transfer curves. Their room-temperature mobility is ∼20-30 cm/(V s), 2 orders of magnitude smaller than predicted previously, a result that we explain quantitatively in terms of the influence of polar-optical phonon scattering in these materials.

Retraction Note: Large local lattice expansion in graphene adlayers grown on copper.

The authors unanimously wish to retract this Article due to their concerns about the interpretation of the low-energy electron microscopy (LEEM) and diffraction (LEED) patterns reported in the manuscript. In this study, the authors used spatial and angle-resolved photoemission spectroscopy (ARPES) to characterize graphene monolayers grown on copper foils, and observed regions of graphene adlayers with enhanced graphene/Cu interaction, higher Dirac cone doping level, moiré mini Dirac cones and large lattice expansion. All these properties have been clearly verified and reproduced by photoemission spectroscopy as well as explained by density functional theory.

GraftFast Surface Engineering to Improve MOF Nanoparticles Furtiveness.

Controlling the outer surface of nanometric metal-organic frameworks (nanoMOFs) and further understanding the in vivo effect of the coated material are crucial for the convenient biomedical applications of MOFs. However, in most studies, the surface modification protocol is often associated with significant toxicity and/or lack of selectivity. As an alternative, how the highly selective and general grafting GraftFast method leads, through a green and simple process, to the successful attachment of multifunctional biopolymers (polyethylene glycol (PEG) and hyaluronic acid) on the external surface of nanoMOFs is reported.

Resolving Deep Quantum-Well States in Atomically Thin 2H-MoTe Flakes by Nanospot Angle-Resolved Photoemission Spectroscopy.

Transition-metal dichalcogenides exhibit strong quantum confinement effects, and their electronic structure is strongly dependent on the number of layers. Resolving the thickness-dependent electronic structure is important. While the electronic structure of atomically thin 2H-MoSe or 2H-MoS have been explored, information on the experimental electronic structure of 2H-MoTe is still missing.

Quasicrystalline 30° twisted bilayer graphene as an incommensurate superlattice with strong interlayer coupling.

The interlayer coupling can be used to engineer the electronic structure of van der Waals heterostructures (superlattices) to obtain properties that are not possible in a single material. So far research in heterostructures has been focused on commensurate superlattices with a long-ranged Moiré period. Incommensurate heterostructures with rotational symmetry but not translational symmetry (in analogy to quasicrystals) are not only rare in nature, but also the interlayer interaction has often been assumed to be negligible due to the lack of phase coherence.

Black Arsenic: A Layered Semiconductor with Extreme In-Plane Anisotropy.

2D layered materials have emerged in recent years as a new platform to host novel electronic, optical, or excitonic physics and develop unprecedented nanoelectronic and energy applications. By definition, these materials are strongly anisotropic between the basal plane and cross the plane. The structural and property anisotropies inside their basal plane, however, are much less investigated.

Large local lattice expansion in graphene adlayers grown on copper.

Variations of the lattice parameter can significantly change the properties of a material, and, in particular, its electronic behaviour. In the case of graphene, however, variations of the lattice constant with respect to graphite have been limited to less than 2.5% due to its well-established high in-plane stiffness.

Emergence of Interfacial Polarons from Electron-Phonon Coupling in Graphene/h-BN van der Waals Heterostructures.

van der Waals heterostructures, vertical stacks of layered materials, offer new opportunities for novel quantum phenomena which are absent in their constituent components. Here we report the emergence of polaron quasiparticles at the interface of graphene/hexagonal boron nitride (h-BN) heterostructures. Using nanospot angle-resolved photoemission spectroscopy, we observe zone-corner replicas of h-BN valence band maxima, with energy spacing coincident with the highest phonon energy of the heterostructure, an indication of Fröhlich polaron formation due to forward-scattering electron-phonon coupling.