Sparked ZnO nanoparticles-based electrochemical sensor for onsite determination of glyphosate residues.

Glyphosate (N-(phosphonomethyl)glycine) is well known nonselective and broad-spectrum herbicide that has been extensively used in agricultural areas around the world to increase agricultural productivity. However, the utilization of glyphosate can cause environmental contamination and health problems. Therefore, the detection of glyphosate with a fast, low-cost, and portable sensor is still important.

High-Resolution Nanoanalytical Insights into Particle Formation in SnO/ZnO Core/Shell Nanowire Lithium-Ion Battery Anodes.

Tin oxide (SnO)/zinc oxide (ZnO) core/shell nanowires as anode materials in lithium-ion batteries (LIBs) were investigated using a combination of classical electrochemical analysis and high-resolution electron microscopy to correlate structural changes and battery performance. The combination of the conversion materials SnO and ZnO is known to have higher storage capacities than the individual materials. We report the expected electrochemical signals of SnO and ZnO for SnO/ZnO core/shell nanowires as well as unexpected structural changes in the heterostructure after cycling.

Effects of field enhanced charge transfer on the luminescence properties of Si/SiO superlattices.

The effect of an externally applied electric field on exciton splitting and carrier transport was studied on 3.5 nm Si nanocrystals embedded in SiO superlattices with barrier oxide thicknesses varied between 2 and 4 nm. Through a series of photoluminescence measurements performed at both room temperature and with liquid N cooling, it was shown that the application of an electric field resulted in a reduction of luminescence intensity due to exciton splitting and charging of nanocrystals within the superlattices.

Transition from freestanding SnO nanowires to laterally aligned nanowires with a simulation-based experimental design.

In this study, we used simulations as a guide for experiments in order to switch freestanding nanowire growth to a laterally aligned growth mode. By means of finite element simulations, we determined that a higher volumetric flow and a reduced process pressure will result in a preferred laterally aligned nanowire growth. Furthermore, increasing the volumetric flow leads to a higher species dilution.

Influence of Al₂O₃ Nanoparticle Addition on a UV Cured Polyacrylate for 3D Inkjet Printing.

The brittleness of acrylic photopolymers, frequently used in 3D Inkjet printing, limits their utilization in structural applications In this study, a process was developed for the production and characterization of an alumina-enhanced nanocomposite with improved mechanical properties for Inkjet printing. Ceramic nanoparticles with an average primary particle size (APPS) of 16 nm and 31 nm, which was assessed via high-resolution scanning electron microscopy (HRSEM), were functionalized with 3.43 and 5.

Electron Beam Effects on Oxide Thin Films-Structure and Electrical Property Correlations.

In situ transmission electron microscope (TEM) characterization techniques provide valuable information on structure-property correlations to understand the behavior of materials at the nanoscale. However, understanding nanoscale structures and their interaction with the electron beam is pivotal for the reliable interpretation of in situ/ex situ TEM studies. Here, we report that oxides commonly used in nanoelectronic applications, such as transistor gate oxides or memristive devices, are prone to electron beam induced damage that causes small structural changes even under very low dose conditions, eventually changing their electrical properties as examined via in situ measurements.

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride.

Phosphorus- and boron-doped silicon nanocrystals (Si NCs) embedded in silicon oxide matrix can be fabricated by plasma-enhanced chemical vapour deposition (PECVD). Conventionally, SiH and NO are used as precursor gasses, which inevitably leads to the incorporation of ≈10 atom % nitrogen, rendering the matrix a silicon oxynitride. Alternatively, SiH and O can be used, which allows for completely N-free silicon oxide.

Changes of the absorption cross section of Si nanocrystals with temperature and distance.

The absorption cross section (ACS) of silicon nanocrystals (Si NCs) in single-layer and multilayer structures with variable thickness of oxide barriers is determined via a photoluminescence (PL) modulation technique that is based on the analysis of excitation intensity-dependent PL kinetics under modulated pumping. We clearly demonstrate that roughly doubling the barrier thickness (from ca. 1 to 2.

Boron-Incorporating Silicon Nanocrystals Embedded in SiO: Absence of Free Carriers vs. B-Induced Defects.

Boron (B) doping of silicon nanocrystals requires the incorporation of a B-atom on a lattice site of the quantum dot and its ionization at room temperature. In case of successful B-doping the majority carriers (holes) should quench the photoluminescence of Si nanocrystals via non-radiative Auger recombination. In addition, the holes should allow for a non-transient electrical current.

Label-free SnO nanowire FET biosensor for protein detection.

Novel tin oxide field-effect-transistors (SnO NW-FET) for pH and protein detection applicable in the healthcare sector are reported. With a SnO NW-FET the proof-of-concept of a bio-sensing device is demonstrated using the carrier transport control of the FET channel by a (bio-) liquid modulated gate. Ultra-thin AlO fabricated by a low temperature atomic layer deposition (ALD) process represents a sensitive layer to H ions safeguarding the nanowire at the same time.

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide.

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement.

Defect-Induced Luminescence Quenching vs. Charge Carrier Generation of Phosphorus Incorporated in Silicon Nanocrystals as Function of Size.

Phosphorus doping of silicon nanostructures is a non-trivial task due to problems with confinement, self-purification and statistics of small numbers. Although P-atoms incorporated in Si nanostructures influence their optical and electrical properties, the existence of free majority carriers, as required to control electronic properties, is controversial. Here, we correlate structural, optical and electrical results of size-controlled, P-incorporating Si nanocrystals with simulation data to address the role of interstitial and substitutional P-atoms.

Quasi-Direct Optical Transitions in Silicon Nanocrystals with Intensity Exceeding the Bulk.

Comparison of the measured absolute absorption cross section on a per Si atom basis of plasma-synthesized Si nanocrystals (NCs) with the absorption of bulk crystalline Si shows that while near the band edge the NC absorption is weaker than the bulk, yet above ∼ 2.2 eV the NC absorbs up to 5 times more than the bulk. Using atomistic screened pseudopotential calculations we show that this enhancement arises from interface-induced scattering that enhances the quasi-direct, zero-phonon transitions by mixing direct Γ-like wave function character into the indirect X-like conduction band states, as well as from space confinement that broadens the distribution of wave functions in k-space.

A Simple Approach for Molecular Controlled Release based on Atomic Layer Deposition Hybridized Organic-Inorganic Layers.

On-demand release of bioactive substances with high spatial and temporal control offers ground-breaking possibilities in the field of life sciences. However, available strategies for developing such release systems lack the possibility of combining efficient control over release with adequate storage capability in a reasonably compact system. In this study we present a new approach to target this deficiency by the introduction of a hybrid material.

Location and Electronic Nature of Phosphorus in the Si Nanocrystal--SiO2 System.

Up to now, no consensus exists about the electronic nature of phosphorus (P) as donor for SiO2-embedded silicon nanocrystals (SiNCs). Here, we report on hybrid density functional theory (h-DFT) calculations of P in the SiNC/SiO2 system matching our experimental findings. Relevant P configurations within SiNCs, at SiNC surfaces, within the sub-oxide interface shell and in the SiO2 matrix were evaluated.

Observing the morphology of single-layered embedded silicon nanocrystals by using temperature-stable TEM membranes.

We use high-temperature-stable silicon nitride membranes to investigate single layers of silicon nanocrystal ensembles by energy filtered transmission electron microscopy. The silicon nanocrystals are prepared from the precipitation of a silicon-rich oxynitride layer sandwiched between two SiO2 diffusion barriers and subjected to a high-temperature annealing. We find that such single layers are very sensitive to the annealing parameters and may lead to a significant loss of excess silicon.

Dielectrophoretic investigation of Bi₂Te₃ nanowires-a microfabricated thermoelectric characterization platform for measuring the thermoelectric and structural properties of single nanowires.

In this article a microfabricated thermoelectric nanowire characterization platform to investigate the thermoelectric and structural properties of single nanowires is presented. By means of dielectrophoresis (DEP), a method to manipulate and orient nanowires in a controlled way to assemble them onto our measurement platform is introduced. The thermoelectric platform fabricated with optimally designed DEP electrodes results in a yield of nanowire assembly of approximately 90% under an applied peak-to-peak ac signal Vpp = 10 V and frequency f = 20 MHz within a series of 200 experiments.

Atomic-layer-deposition alumina induced carbon on porous Ni(x)Co(1-x)O nanonets for enhanced pseudocapacitive and Li-ion storage performance.

A unique composite nanonet of metal oxide@carbon interconnected sheets is obtained by atomic layer deposition (ALD)-assisted fabrication. In this nanonet structure, mesoporous metal oxide nanosheets are covered by a layer of amorphous carbon nanoflakes. Specifically, quasi-vertical aligned and mesoporous Ni(x)Co(1-x)O nanosheets are first fabricated directly on nickel foam substrates by a hydrothermal method.

Ultra-long zinc oxide nanowires and boron doping based on ionic liquid assisted thermal chemical vapor deposition growth.

Ionic liquid assisted growth of ultra-long ZnO nanowires from thermal chemical vapor deposition and the incorporation of dopants into the ZnO lattice have been investigated. We find that decomposed components of the ionic liquid at higher temperatures facilitate ultra-long vapor-liquid-solid ZnO nanowires that exhibit an unusual a-axis orientation. In particular, the ionic liquid BMImBF4 has been studied and the mechanism of the nanowire growth model in response to the use of the ionic liquid has been explained.

Engineered high aspect ratio vertical nanotubes as a model system for the investigation of catalytic methanol synthesis over Cu/ZnO.

Catalytically synthesized methanol from H2 and CO2 using porous Cu/ZnO aggregates is a promising, carbon neutral, and renewable alternative to replace fossil fuel based transport fuels. However, the absence of surface-engineered model systems to understand and improve the industrial Cu/ZnO catalyst poses a big technological gap in efforts to increase industrial methanol conversion efficiency. In this work, we report a novel process for the fabrication of patterned, vertically aligned high aspect ratio 1D nanostructures on Si that can be used as an engineered model catalyst.

Detection of real-time dynamics of drug-target interactions by ultralong nanowalls.

Detecting drug-target interactions in real-time is a powerful approach for drug discovery and analytics. We show here for the first time the ultra fast electrical real-time detection and quantification of antibiotics using a novel biohybrid nanosensor. The biomolecular sensing is performed on ultralong (mm range) high aspect ratio nanowall (50 nm width) surfaces functionalized with operator DNA tetO which is specifically bound by the sensor protein TetR.

Antisolvent crystallization approach to construction of CuI superstructures with defined geometries.

A facile high-yield production of cuprous iodide (CuI) superstructures is reported by antisolvent crystallization using acetonitrile/water as a solvent/antisolvent couple under ambient conditions. In the presence of trace water, the metastable water droplets act as templates to induce the precipitation of hollow spherical CuI superstructures consisting of orderly aligned building blocks after drop coating. With water in excess in the mixed solution, an instant precipitation of CuI random aggregates takes place due to rapid crystal growth via ion-by-ion attachment induced by a strong antisolvent effect.

Tracing the migration history of metal catalysts in metal-assisted chemically etched silicon.

Three-dimensional (3D) visualization of complex embedded nanopore networks in silicon requires expensive machinery and tedious sample preparation procedures such as electron tomography, also known as 3D transmission electron microscopy. In this article, we report a new, fast, powerful, and low-cost three-dimensional imaging technique with sub-5 nm resolution. This new imaging method is applied to metal-assisted chemically etched monocrystalline Si to demonstrate its capabilities.

Gibbs free energy and equilibrium states in the Si/Si oxide systems.

In this paper, the equilibrium states in the Si/Si oxide systems formed as a result of the phase separation of nonstoichiometric silicon oxide films are studied. The expressions for the Gibbs free energy of Si oxide and Si/Si oxide systems are derived thermodynamically. The transformations of the Gibbs free energy in the amorphous Si/Si oxide and the crystalline Si/Si oxide systems with the change in the amount of separated silicon and the composition of the silicon oxide phase are analyzed.