Spectral dependence of THz emission from InN and InGaN layers.

Spectral dependence of terahertz emission is a sensitive tool to analyze the structure of conduction band of semiconductors. In this work, we investigate the excitation spectra of THz pulses emitted from MOCVD-grown InN and InGaN epitaxial layers with indium content of 16%, 68%, and 80%. In InN and indium-rich InGaN layers we observe a gradual saturation of THz emission efficiency with increasing photon energy.

Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage.

In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 10 cm and mobility 980 cm²/(V s)) showed good rectifying behavior.

Direct Auger recombination and density-dependent hole diffusion in InN.

Indium nitride has a good potential for infrared optoelectronics, yet it suffers from fast nonradiative recombination, the true origin of which has not been established with certainty. The diffusion length of free carriers at high densities is not well investigated either. Here, we study carrier recombination and diffusion using the light-induced transient grating technique in InN epilayers grown by pulsed MOCVD on c-plane sapphire.