Rigid ion model of high field transport in GaN.

Here we report on high field transport in GaN based on the rigid ion model of the electron-phonon interaction within the cellular Monte Carlo (CMC) approach. Using the rigid pseudo-ion method for the cubic zinc-blende and hexagonal wurtzite structures, the anisotropic deformation potentials are derived from the electronic structure, the atomic pseudopotential and the full phonon dispersion and eigenvectors for both acoustic and optical modes. Several different electronic structure and lattice dynamics models are compared, as well as different models for the interpolation of the atomic pseudopotentials required in the rigid pseudo-ion method.