Publications by authors named "Marco Faverzani"

In this work we theoretically investigate the possibility of observing strong coupling at mid-infrared frequencies within the group-IV semiconductor material platform. Our results show that the strong coupling condition is attainable in Ge/SiGe quantum wells integrated in hybrid metal-semiconductor microcavities, featuring a highly n-doped SiGe layer as one of the mirrors.

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Experiments aiming at high sensitivities usually demand for a very high statistics in order to reach more precise measurements. However, for those exploiting Low Temperature Detectors (LTDs), a high source activity may represent a drawback, if the events rate becomes comparable with the detector characteristic temporal response. Indeed, since commonly used optimum filtering approaches can only process LTDs signals well isolated in time, a non-negligible part of the recorded experimental data-set is discarded and hence constitute the .

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