Area-selective atomic layer deposition of Ru on electron-beam-written Pt(C) patterns versus SiO substratum.

Area selectivity is an emerging sub-topic in the field of atomic layer deposition (ALD), which employs opposite nucleation phenomena to distinct heterogeneous starting materials on a surface. In this paper, we intend to grow Ru exclusively on locally pre-defined Pt patterns, while keeping a SiO substratum free from any deposition. In a first step, we study in detail the Ru ALD nucleation on SiO and clarify the impact of the set-point temperature.