This study revolves around the issues raised by the current semiconductor device metal casings (mainly composed of aluminum and its alloys), such as resource and energy consumption, complexity of the production process, and environmental pollution. To address these issues, researchers have proposed an eco-friendly and high-performance alternative material-AlO particle-filled nylon composite functional material. This research conducted detailed characterization and analysis of the composite material through scanning electron microscopy (SEM) and differential scanning calorimetry (DSC).
View Article and Find Full Text PDFThe insulated-gate bipolar transistor (IGBT) represents a crucial component within the domain of power semiconductor devices, which finds ubiquitous employment across a range of critical domains, including new energy vehicles, smart grid systems, rail transit, aerospace, etc. The main characteristics of its operating environment are high voltage, large current, and high power density, which can easily cause issues, such as thermal stress, thermal fatigue, and mechanical stress. Therefore, the reliability of IGBT module packaging has become a critical research topic.
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