Calculations of spin-polarized Goos-Hänchen displacement in magnetically confined GaAs/Al Ga As nanostructure modulated by spin-orbit couplings.

We theoretically investigate Goos-Hänchen (GH) displacement by modelling the spin transport in an archetypal device structure-a magnetically confined GaAs/Al Ga As nanostructure modulated by spin-orbit coupling (SOC). Both Rashba and Dresselhaus SOCs are taken into account. The degree of spin-polarized GH displacement can be tuned by Rashba or Dresselhaus SOC, i.

Voltage-controllable spin beam splitter based on realistic magnetic-barrier nanostructure.

We report a theoretical investigation on the Goos-Hänchen (GH) effect of spin electron beams in realistic magnetic-barrier (MB) nanostructures under an applied voltage, which can be experimentally created by lithographic patterning of ferromagnetic (FM) or superconducting films. GH shifts of spin electron beams are calculated numerically for the InAs material system, with the help of the stationary phase method. It is shown that a significant spin polarization effect can be induced by such MB nanostructures with symmetric magnetic field profiles.