Effect of dimensionality on the excitation wavelength dependence of the Fano-Raman line-shape: a brief review.

The already existing heterogeneity in nanomaterials makes it an intriguing yet complex system to study size effect other external perturbations and thereby local modifications at the nanoscale, thus demanding an improved tool and analysis for the choice of study. The analysis of existential subtle perturbations and interactions in a wide class of materials using Raman spectromicroscopy has proved to be of utmost importance, and various phenomena such as quantum confinement and its interplay with Fano resonance have already been investigated in nanomaterials, including the role of various perturbations such as temperature, pressure, doping, bias, and excitation wavelength on Raman spectral line shape parameters. Amongst different perturbations that cause a change in the spectral profile of Fano resonance, the gray area of wavelength dependence of Fano Raman line shape profiles has been least analysed in the literature.

Fano-Type Wavelength-Dependent Asymmetric Raman Line Shapes from MoS Nanoflakes.

Excitation wavelength-dependent Raman spectroscopy has been carried out to study electron-phonon interaction (Fano resonance) in multi-layered bulk 2H-MoS nano-flakes. The electron-phonon coupling is proposed to be caused due to interaction between energy of an excitonic quasi-electronic continuum and the discrete one phonon, first-order Raman modes of MoS. It is proposed that an asymmetrically broadened Raman line shape obtained by 633 nm laser excitation is due to electron-phonon interaction whose electronic continuum is provided by the well-known A and B excitons.

Bifunctional Application of Viologen-MoS-CNT/Polythiophene Device as Electrochromic Diode and Half-Wave Rectifier.

A dual purpose solid state electrochromic diode has been fabricated using polythiophene (P3HT) and ethyl Viologen (EV), predoped with multiwalled carbon nanotubes (MWCNTs) and MoS. The device has been designed by considering two important aspects, first, the complementary redox activity of P3HT and EV and second, the electron holding properties of MoS and MWCNTs. The latter is found to enhance the electrochromic performance of the solid state device.

Energy dispersive anti-anharmonic effect in a Fano intervened semiconductor: revealed through temperature and wavelength-dependent Raman scattering.

It is always interesting to understand how the interplay between two perturbations, affects any physical process and gets manifested in a semiconductor. Temperature- and wavelength-dependent Raman Spectromicroscopy was performed on heavily-doped Si to reveal an unusual anti-anharmonic effect. Additionally, the energy dispersive behaviour of Fano coupling strength was also studied and its possible interrelation with the observed anti-anharmonic effect was explored.

Early biomolecular changes in brain microvascular endothelial cells under Epstein-Barr virus influence: a Raman microspectroscopic investigation.

The brain microvascular endothelial cells (ECs) play an important role in protecting the brain from hazardous pathogens. However, some viral pathogens can smartly modulate the endothelial pathways to gain entry inside the brain. Further, these viruses can cause endothelial dysfunction which could develop serious neurological ailments.

Nonlinear Temperature-Dependent Phonon Decay in Heavily Doped Silicon: Predominant Interferon-Mediated Cold Phonon Annihilation.

A nonlinear Fano interaction has been reported here which is manifest in terms of a parabolic temperature-dependent phonon decay process observable in terms of a Raman spectral parameter. Temperature-dependent Raman spectroscopic studies have been carried out on heavily and moderately doped crystalline silicon to investigate the behavior of anharmonic phonon decay in semiconductor systems where Fano interactions are present inherently. Systematic study reveals that in heavily doped systems an interferon-mediated decay route exists for cold phonons present at lower temperatures (<475 K) where Fano coupling is stronger and dominates over the typical multiple-phonon decay process.

Enhanced interfacial charge transfer on strain-induced 2D-1D/MoS-TiOheterostructures for electrochemical and photocatalytic applications.

Two-dimensional (2D)/one dimensionsal (1D)-MoS/TiOheterostructures have proven to be potent for photocatalytic applications. Enhancement of a heterostructure's photocatalytic activity may be influenced by the accumulation of strain at the interface, which affects the interfacial interaction. Keeping this in mind, the present paper reports strain-accumulated interfacial modification of 2D/1D-MoS/TiOheterostructures for the enhancement of photocatalytic activity.

Comparative Account of Biomolecular Changes Post Epstein Barr Virus Infection of the Neuronal and Glial Cells Using Raman Microspectroscopy.

Raman microspectroscopy is a vibrational spectroscopy technique used for investigating molecular fingerprints of a wide range of liquid or solid samples. The technique can be efficiently utilized to understand the virus-mediated cellular changes and could provide valuable insights into specific biomolecular alterations. The Epstein Barr virus (EBV) has been associated with various types of cancers as well as neurodegenerative diseases.

Ultrafast carrier dynamics in a monolayer MoSat carrier densities well above Mott density.

Due to the growing interest in monolayer (ML) molybdenum disulfide (MoS) in several optoelectronic applications like lasers, detectors, sensors, it is important to understand the ultrafast behavior of the excited carriers in this material. In this article, a comprehensive study of the charge carrier dynamics of a monolayer MoSflake has been studied using transient transmission technique near A-exciton under high excitation densities well above the Mott density. Fluence dependent studies has been carried out to understand the origin of the processes which modifies its optical response under excitation.

Atypical Green Luminescence from Raw Extract: A Comparison with Red Emitting .

Optical and electrochemical properties from Cassia and Giloy leaves' raw extract have been studied, and they show similar properties as UV absorber but different emission properties, under UV excitation, even though they appear the same in natural light. Giloy and Cassia extracts show red and green luminescence, respectively, under UV excitation. Like the appearance, their redox properties are also similar, which shows that both can act as antioxidants.

Raman Spectroscopy as a Simple yet Effective Analytical Tool for Determining Fermi Energy and Temperature Dependent Fermi Shift in Silicon.

The Fermi energy is known to be dependent on doping and temperature, but finding its value and corresponding thermal Fermi shift experimentally is not only difficult but is virtually impossible if one attempts their simultaneous determination. We report that temperature dependent Raman spectromicroscopy solves the purpose easily and proves to be a powerful technique to determine the position and temperature associated Fermi shift in an extrinsic semiconductor as demonstrated for silicon in the present study. The typical asymmetrically broadened Raman spectral line-shape from sufficiently doped n- and p-type silicon contains the information about the Fermi level position through its known association with the Fano coupling strength.

Pseudo-Anomalous Size-Dependent Electron-Phonon Interaction in Graded Energy Band: Solving the Fano Paradox.

Quantum size effects on interferons (electron-phonon bound states), confined in fractal silicon (Si) nanostructures (NSs), have been studied by using Raman spectromicroscopy. A paradoxical size dependence of Fano parameters, estimated from Raman spectra, has been observed as a consequence of longitudinal variation of nanocrystallite size along the Si wires leading to local variations in the dopants' density which actually starts governing the Fano coupling, thus liberating the interferons to exhibit the typical quantum size effect. These interferons are more dominated by the effective reduction in dopants' density rather than the quantum confinement effect.

Tracking Dynamic Doping in a Solid-State Electrochromic Device: Raman Microscopy Validates the Switching Mechanism.

Solid-state electrochromic devices often need appropriate characterization to establish the real working mechanism for optimization and diagnosis. Raman mapping has been used here to track "dynamic doping", an important concept in organic electronics and in polythiophene-based solid-state electrochromic devices to understand and validate the mechanism of bias-induced redox-driven color switching. The proposed method demonstrates the live formation and movement of polarons which is best suited for in situ solid-state Raman spectroelectrochemistry.

Deconvoluting Diffuse Reflectance Spectra for Retrieving Nanostructures' Size Details: An Easy and Efficient Approach.

A new model has been reported here to estimate the mean size and size distribution in nanostructured materials by utilizing a simple and economic diffuse reflectance spectroscopy through spectral line-shape analysis. In the proposed model, a theoretical line shape has been derived by taking into account a size distribution function, which represents a variation in absorption coefficient as a function of size, which in turn depends on the band gap and thus on the excitation photon energy. A fitting of the experimental absorption spectra with the derived line-shape function yields the mean crystallite size and size distribution.

Quantifying the Short-Range Order in Amorphous Silicon by Raman Scattering.

Quantification of the short-range order in amorphous silicon has been formulized using Raman scattering by taking into account established frameworks for studying the spectral line-shape and size dependent Raman peak shift. A theoretical line-shape function has been proposed for representing the observed Raman scattering spectrum from amorphous-Si-based on modified phonon confinement model framework. While analyzing modified phonon confinement model, the term "confinement size" used in the context of nanocrystalline Si was found analogous to the short-range order distance in a-Si thus enabling one to quantify the same using Raman scattering.