Formation of oxygen protective layer on monolayer MoS low energy electron irradiation.

Monolayer molybdenum disulfide (MoS) semiconductors are the new generation of two-dimensional materials that possess several advantages compared to graphene due to their tunable bandgap and high electron mobility. Several approaches have been used to modify their physical properties for optical device applications. Here, we report a facile and non-destructive surface modification method for monolayer MoS electron irradiation at a low, 5 kV accelerating voltage.