Volatile and Nonvolatile Programmable Iontronic Memristor with Lithium Imbued TiO for Neuromorphic Computing Applications.

We demonstrate a lithium (Li) imbued TiO iontronic device that exhibits synapse-like short-term plasticity behavior without requiring a forming process beforehand or a compliance current during switching. A solid-state electrolyte lithium phosphorus oxynitride (LiPON) behaves as the ion source, and the embedding and releasing of Li ions inside the cathodic like TiO renders volatile conductance responses from the device and offers a natural platform for hardware simulating neuron functionalities. Besides, these devices possess high uniformity and great endurance as no conductive filaments are present.

Recent advances in label-free optical, electrochemical, and electronic biosensors for glioma biomarkers.

Gliomas are the most commonly occurring primary brain tumor with poor prognosis and high mortality rate. Currently, the diagnostic and monitoring options for glioma mainly revolve around imaging techniques, which often provide limited information and require supervisory expertise. Liquid biopsy is a great alternative or complementary monitoring protocol that can be implemented along with other standard diagnosis protocols.

Size-dependent optoelectrical properties of 365 nm ultraviolet light-emitting diodes.

In this paper, the size-dependent optical and electrical properties of 365 nm InGaN/AlGaN ultraviolet micron-size light-emitting diodes (μLEDs) on c-plane sapphire substrates is investigated. The series resistance of the μLED increased from 20 Ω to 15 kΩ when the diameter of the device decreased from 150 to 3 μm. The ideality factor increased from 4 to 4.

Integration of GaN light-emitting diodes with a-Si:H thin-film transistors for flexible displays.

In this work, the successful integration of a-Si:H thin-film transistors (TFTs) and high-efficiency μ-iLEDs on large-area flexible substrates has been demonstrated. A conventional low-temperature a-Si:H TFT fabrication process combined with a laser lift-off transfer procedure was used to integrate μ-iLEDs with flexible TFT pixel circuits. Electrical and optical characterization showed the current-voltage and electroluminescence characteristics of the TFTs and LEDs did not change after integration onto the flexible platforms.