Ultrafast Pulse Generation from Quantum Cascade Lasers.

Quantum cascade lasers (QCLs) have broken the spectral barriers of semiconductor lasers and enabled a range of applications in the mid-infrared (MIR) and terahertz (THz) regimes. However, until recently, generating ultrashort and intense pulses from QCLs has been difficult. This would be useful to study ultrafast processes in MIR and THz using the targeted wavelength-by-design properties of QCLs.

Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice.

In this work, a mid-wavelength infrared separate absorption and multiplication avalanche photodiode (SAM-APD) with 100% cut-off wavelength of ~ 5.0 µm at 200 K grown by molecular beam epitaxy was demonstrated. The InAsSb-based SAM-APD device was designed to have electron dominated avalanche mechanism via the band structure engineered multi-quantum well structure based on AlAsSb/GaSb H-structure superlattice and InAsSb material in the multiplication region.

Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice.

The LWIR and longer wavelength regions are of particular interest for new developments and new approaches to realizing long-wavelength infrared (LWIR) photodetectors with high detectivity and high responsivity. These photodetectors are highly desirable for applications such as infrared earth science and astronomy, remote sensing, optical communication, and thermal and medical imaging. Here, we report the design, growth, and characterization of a high-gain band-structure-engineered LWIR heterojunction phototransistor based on type-II superlattices.

High power continuous wave operation of single mode quantum cascade lasers up to 5 W spanning λ∼3.8-8.3 µm.

In this work, we report high power continuous wave room-temperature operation single mode quantum cascade lasers in the mid-infrared spectral range from 3.8 to 8.3 µm.

Room temperature terahertz semiconductor frequency comb.

A terahertz (THz) frequency comb capable of high-resolution measurement will significantly advance THz technology application in spectroscopy, metrology and sensing. The recently developed cryogenic-cooled THz quantum cascade laser (QCL) comb has exhibited great potentials with high power and broadband spectrum. Here, we report a room temperature THz harmonic frequency comb in 2.

Type-II superlattices base visible/extended short-wavelength infrared photodetectors with a bandstructure-engineered photo-generated carrier extractor.

Visible/extended short-wavelength infrared photodetectors with a bandstructure-engineered photo-generated carrier extractor based on type-II InAs/AlSb/GaSb superlattices have been demonstrated. The photodetectors are designed to have a 100% cut-off wavelength of ~2.4 μm at 300K, with sensitivity down to visible wavelengths.

Surface Emitting, Tunable, Mid-Infrared Laser with High Output Power and Stable Output Beam.

A reflective outcoupler is demonstrated which can allow for stable surface emission from a quantum cascade laser and has potential for cost-effective wafer-scale manufacturing. This outcoupler is integrated with an amplified, electrically tunable laser architecture to demonstrate high power surface emission at a wavelength near 4.9 μm.

Strain-Induced Metastable Phase Stabilization in GaO Thin Films.

It is well known that metastable and transient structures in bulk can be stabilized in thin films via epitaxial strain (heteroepitaxy) and appropriate growth conditions that are often far from equilibrium. However, the mechanism of heteroepitaxy, particularly how the nominally unstable or metastable phase gets stabilized, remains largely unclear. This is especially intriguing for thin-film GaO, where multiple crystal phases may exist under varied growth conditions with spatial and dimensional constraints.

Single-mode, high-power, mid-infrared, quantum cascade laser phased arrays.

We demonstrate single-mode, 16-channel, optical phased arrays based on quantum cascade laser technology, with emission wavelengths around 4.8 µm. The integrated device consists of a distributed feedback seed section, a highly-efficient tree array multi-mode interferometer power splitter, and a 16-channel amplifier array with a 4° angled facet termination.

nBn extended short-wavelength infrared focal plane array.

An extended short-wavelength nBn InAs/GaSb/AlSb type-II superlattice-based infrared focal plane array imager was demonstrated. A newly developed InAsSb/GaSb superlattice design was used as the large-bandgap electron barrier in this photodetector. The large band gap electron-barrier design in this nBn photodetector architecture leads to the device having lower dark current densities.

Author Correction: Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface.

A correction to this article has been published and is linked from the HTML version of this paper. The error has been fixed in the paper.

Recent progress of quantum cascade laser research from 3 to 12 μm at the Center for Quantum Devices [Invited].

The quantum cascade laser (QCL) is becoming the leading laser source in the mid-infrared (mid-IR) range, which contains two atmospheric transmission windows and many molecular fingerprint absorption features. Since its first demonstration in 1994, the QCL has undergone tremendous development in terms of the output power, wall plug efficiency, wavelength coverage, tunability and beam quality. At the Center for Quantum Devices, we have demonstrated high-power continuous wave operation of QCLs covering a wide wavelength range from 3 to 12 μm, with power output up to 5.

Type-II superlattice-based extended short-wavelength infrared focal plane array with an AlAsSb/GaSb superlattice etch-stop layer to allow near-visible light detection.

A versatile infrared imager capable of imaging the near-visible to the extended short-wavelength infrared (e-SWIR) is demonstrated using e-SWIR InAs/GaSb/AlSb type-II superlattice-based photodiodes. A bi-layer etch-stop scheme consisting of bulk InAsSb and AlAsSb/GaSb superlattice layers is introduced for substrate removal from the hybridized back-side illuminated photodetectors. The implementation of this new technique on an e-SWIR focal plane array results in a significant enhancement in the external quantum efficiency (QE) in the 1.

Bias-selectable three-color short-, extended-short-, and mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices.

A bias-selectable, high operating temperature, three-color short-, extended-short-, and mid-wavelength infrared photodetector based on InAs/GaSb/AlSb type-II superlattices on GaSb substrate has been demonstrated. The short-, extended-short-, and mid-wavelength channels' 50% cutoff wavelengths were 2.3, 2.

Dark current reduction in microjunction-based double electron barrier type-II InAs/InAsSb superlattice long-wavelength infrared photodetectors.

Microjunction InAs/InAsSb type-II superlattice-based long-wavelength infrared photodetectors with reduced dark current density were demonstrated. A double electron barrier design was employed to reduce both bulk and surface dark currents. The photodetectors exhibited low surface leakage after passivation with SiO, allowing the use of very small size features without degradation of the dark current.

Monolithic beam steering in a mid-infrared, surface-emitting, photonic integrated circuit.

The mid-infrared (2.5 < λ < 25 μm) spectral region is utilized for many purposes, such as chemical/biological sensing, free space communications, and illuminators/countermeasures. Compared to near-infrared optical systems, however, mid-infrared component technology is still rather crude, with isolated components exhibiting limited functionality.

Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface.

We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/AlO film grown under the same conditions. These impressive transport properties are attributed to increased mobility of electrons at the MgZnO/ZnO heterojunction interface. Depth-resolved cathodoluminescence and photoluminescence studies reveal a 3.

Bias-selectable nBn dual-band long-/very long-wavelength infrared photodetectors based on InAs/InAsSb/AlAsSb type-II superlattices.

Type-II superlattices (T2SLs) are a class of artificial semiconductors that have demonstrated themselves as a viable candidate to compete with the state-of-the-art mercury-cadmium-telluride material system in the field of infrared detection and imaging. Within type-II superlattices, InAs/InAsSb T2SLs have been shown to have a significantly longer minority carrier lifetime. However, demonstration of high-performance dual-band photodetectors based on InAs/InAsSb T2SLs in the long and very long wavelength infrared (LWIR & VLWIR) regimes remains challenging.

High efficiency quantum cascade laser frequency comb.

An efficient mid-infrared frequency comb source is of great interest to high speed, high resolution spectroscopy and metrology. Here we demonstrate a mid-IR quantum cascade laser frequency comb with a high power output and narrow beatnote linewidth at room temperature. The active region was designed with a strong-coupling between the injector and the upper lasing level for high internal quantum efficiency and a broadband gain.

Impact of scaling base thickness on the performance of heterojunction phototransistors.

In this letter we report the effect of vertical scaling on the optical and electrical performance of mid-wavelength infrared heterojunction phototransistors based on type-II InAs/GaSb/AlSb superlattices. The performance of devices with different base thickness was compared as the base was scaled from 60 down to 40 nm. The overall optical performance shows enhancement in responsively, optical gain, and specific detectivity upon scaling the base width.

Monolithically, widely tunable quantum cascade lasers based on a heterogeneous active region design.

Quantum cascade lasers (QCLs) have become important laser sources for accessing the mid-infrared (mid-IR) spectral range, achieving watt-level continuous wave operation in a compact package at room temperature. However, up to now, wavelength tuning, which is desirable for most applications, has relied on external cavity feedback or exhibited a limited monolithic tuning range. Here we demonstrate a widely tunable QCL source over the 6.

High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices.

We propose a new approach in device architecture to realize bias-selectable three-color shortwave-midwave-longwave infrared photodetectors based on InAs/GaSb/AlSb type-II superlattices. The effect of conduction band off-set and different doping levels between two absorption layers are employed to control the turn-on voltage for individual channels. The optimization of these parameters leads to a successful separation of operation regimes; we demonstrate experimentally three-color photodiodes without using additional terminal contacts.

Room temperature continuous wave, monolithic tunable THz sources based on highly efficient mid-infrared quantum cascade lasers.

A compact, high power, room temperature continuous wave terahertz source emitting in a wide frequency range (ν~1-5 THz) is of great importance to terahertz system development for applications in spectroscopy, communication, sensing, and imaging. Here, we present a strong-coupled strain-balanced quantum cascade laser design for efficient THz generation based on intracavity difference frequency generation. Room temperature continuous wave emission at 3.