Atomic Layer Deposition of GeSe Thin Films for Endurable Ovonic Threshold Selectors with a Low Threshold Voltage.

An ovonic threshold switch (OTS) based on amorphous chalcogenide materials possesses several desirable characteristics, including high selectivity and fast switching speed, enabling the fabrication of one selector-one resistor (1S-1R) crossbar array (CBA) for random access memory. Among the several chalcogenide materials, GeSe offers high selectivity and a strong glass-forming ability with environment-friendly, simple binary composition. In this report, the GeSe thin films were deposited via atomic layer deposition (ALD) using Ge(N(Si(CH))) and ((CH)Si)Se for its envisioned application in fabricating three-dimensional vertical-type phase-change memory.

Electroforming-Free Bipolar Resistive Switching in GeSe Thin Films with a Ti-Containing Electrode.

Chalcogenide materials have been regarded as strong candidates for both resistor and selector elements in passive crossbar arrays owing to their dual capabilities of undergoing threshold and resistance switching. This work describes the bipolar resistive switching (BRS) of amorphous GeSe thin films, which used to show Ovonic threshold switching (OTS) behavior. The behavior of this new functionality of the material follows filament-based resistance switching when Ti and TiN are adopted as the top and bottom electrodes, respectively.

Matrix Mapping on Crossbar Memory Arrays with Resistive Interconnects and Its Use in In-Memory Compression of Biosignals.

Recent advances in nanoscale resistive memory devices offer promising opportunities for in-memory computing with their capability of simultaneous information storage and processing. The relationship between current and memory conductance can be utilized to perform matrix-vector multiplication for data-intensive tasks, such as training and inference in machine learning and analysis of continuous data stream. This work implements a mapping algorithm of memory conductance for matrix-vector multiplication using a realistic crossbar model with finite cell-to-cell resistance.