Molecular Beam Epitaxy of β-(InGa)O on β-GaO (010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two-Dimensional Electron Gas Confinement.

In this work, we investigate the growth of monoclinic β-(InGa)O alloys on top of (010) β-GaO substrates via plasma-assisted molecular beam epitaxy. In particular, using different (reflection high-energy electron diffraction) and (atomic force microscopy, X-ray diffraction, time-of-flight secondary ion mass spectrometry, and transmission electron microscopy) characterization techniques, we discuss (i) the growth parameters that allow for In incorporation and (ii) the obtainable structural quality of the deposited layers as a function of the alloy composition. In particular, we give experimental evidence of the possibility of coherently growing (010) β-(InGa)O layers on β-GaO with good structural quality for up to ≈ 0.

Threads of memory: Reviving the ornament of a dead child at the Neolithic village of Ba`ja (Jordan).

In 2018, a well-constructed cist-type grave was discovered at Ba`ja, a Neolithic village (7,400-6,800 BCE) in Southern Jordan. Underneath multiple grave layers, an 8-year-old child was buried in a fetal position. Over 2,500 beads were found on the chest and neck, along with a double perforated stone pendant and a delicately engraved mother-of-pearl ring discovered among the concentration of beads.

Transition between bipolar and abnormal bipolar resistive switching in amorphous oxides with a mobility edge.

Resistive switching is an important phenomenon for future memory devices such as resistance random access memories or neuronal networks. While there are different types of resistive switching, such as filament or interface switching, this work focuses on bulk switching in amorphous, binary oxides. Bulk switching was found experimentally in different oxides, for example in amorphous gallium oxide.

Mechanistic origin of the time-dependence of the open-circuit voltage of a galvanic cell involving a ternary or higher compound.

It has previously been predicted [H.-I. Yoo and M.

A quantitative analysis of two-fold electrical conductivity relaxation behaviour in mixed proton-oxide-ion-electron conductors upon hydration.

Electrical conductivity relaxation experiments on oxides with three mobile charge carriers, H, O and e, yield in (de-)hydration experiments kinetic parameters (diffusion coefficients and surface reaction constants). In addition, three amplitude factors are obtained, but they have not been given further consideration because quantitative expressions for their forms are lacking. In this study, the forms of the amplitude factors are derived for a diffusion-limited and a surface-reaction-limited case and a mixed case.

The oxygen ion conductivity of Lu doped ceria.

The oxygen ion conductivity of polycrystalline samples of Lu doped ceria is studied using impedance spectroscopy. Lutetium doped ceria is of particular interest as Lu has a similar ionic radius as the host cation Ce. The change of the ionic conductivity as a function of the Lu dopant fraction is investigated in detail revealing a similar behavior as Sm doped ceria that has one of the highest ionic conductivity in ternary cerium oxides.

Publisher Correction: Nanoscale percolation in doped BaZrO for high proton mobility.

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

Nanoscale percolation in doped BaZrO for high proton mobility.

Acceptor-doped barium zirconate is a promising proton-conducting oxide for various applications, for example, electrolysers, fuel cells or methane-conversion cells. Despite many experimental and theoretical investigations there is, however, only a limited understanding as to how to connect the complex microscopic proton motion and the macroscopic proton conductivity for the full range of acceptor levels, from diluted acceptors to concentrated solid solutions. Here we show that a combination of density functional theory calculations and kinetic Monte Carlo simulations enables this connection.

Unraveling the Origin and Mechanism of Nanofilament Formation in Polycrystalline SrTiO Resistive Switching Memories.

Three central themes in the study of the phenomenon of resistive switching are the nature of the conducting phase, why it forms, and how it forms. In this study, the answers to all three questions are provided by performing switching experiments in situ in a transmission electron microscope on thin films of the model system polycrystalline SrTiO . On the basis of high-resolution transmission electron microscopy, electron-energy-loss spectroscopy and in situ current-voltage measurements, the conducting phase is identified to be SrTi O .

Oxygen diffusion in amorphous and partially crystalline gallium oxide.

Oxygen transport in amorphous (a-GaO1.5) and partially crystalline (a/c-GaO1.5) gallium oxide was studied by means of 18O/16O isotope exchange experiments and time-of-flight secondary ion mass spectrometry (ToF-SIMS).

Correction: Oxygen diffusion in single crystal barium titanate.

Correction for 'Oxygen diffusion in single crystal barium titanate' by Markus Kessel et al., Phys. Chem.

Understanding the ionic conductivity maximum in doped ceria: trapping and blocking.

Materials with high oxygen ion conductivity and low electronic conductivity are required for electrolytes in solid oxide fuel cells (SOFC) and high-temperature electrolysis (SOEC). A potential candidate for the electrolytes, which separate oxidation and reduction processes, is rare-earth doped ceria. The prediction of the ionic conductivity of the electrolytes and a better understanding of the underlying atomistic mechanisms provide an important contribution to the future of sustainable and efficient energy conversion and storage.

Surface Cation Segregation and Chromium Deposition on the Double-Perovskite Oxide PrBaCoO.

The surface chemistry and the Cr tolerance ability of oxygen electrodes play a vital role in the performance and long-term stability of solid oxide cells (SOCs). In this paper, the surface cation segregations on the double-perovskite oxide PrBaCoO (PBCO) and its relationship with Cr deposition are reported. During high-temperature annealing in an O atmosphere, the elements Ba and Co diffuse out of the lattice and form many BaO and CoO precipitates on the surface, mainly located at grain boundaries.

On the kinetic decomposition voltage of ternary oxides.

In a previous article the authors reported the kinetic unmixing and decomposition of the ternary oxide NiTiO by an externally applied voltage. It was found [J. Chun, et al.

Ab initio calculation of the attempt frequency of oxygen diffusion in pure and samarium doped ceria.

The rate of oxygen ion jumps in a solid oxide depends not only on the activation energy but also on the pre-exponential factor of diffusion. In order to allow a fully ab initio prediction of the oxygen ion conductivity in pure and samarium doped ceria, we calculated the attempt frequency for an oxygen ion jump from first principles combining DFT+U, the NEB method, phonon calculations and the transition state theory. Different definitions of the jump attempt frequency are presented.

Association of defects in doped non-stoichiometric ceria from first principles.

We investigate the interaction and distribution of defects in doped non-stoichometric ceria Ce1-xRExO2-x/2-δ (with RE = Lu, Y, Gd, Sm, Nd, and La) by combining DFT+U calculations and Monte Carlo simulations. The concentrated solution of defects in ceria is described by the pair interactions of dopant ions, oxygen vacancies, and small polarons. The calculated interaction energies for polarons and oxygen vacancies are in agreement with experimental results and previously reported calculations.

Oxygen diffusion in single crystal barium titanate.

Oxygen diffusion in cubic, nominally undoped, (100) oriented BaTiO3 single crystals has been studied by means of (18)O2/(16)O2 isotope exchange annealing and subsequent determination of the isotope profiles in the solid by time-of-flight secondary ion mass spectrometry (ToF-SIMS). Experiments were carried out as a function of temperature 973 < T/K < 1173, at an oxygen activity of aO2 = 0.200, and as a function of oxygen activity 0.

Comment on "How to interpret Onsager cross terms in mixed ionic electronic conductors" by I. Riess, Phys. Chem. Chem. Phys., 2014, 16, 22513.

Here we show that the Onsager cross terms for ion-electron interactions are not an artifact, but the necessity to phenomenologically and completely describe the mass/charge transport of a mixed ionic-electronic conductor in terms of mobile charged components which are the only experimentally operable species. The use of an appropriate comprehensive defect model may help to reduce the cross terms (which depend on the choice of formal charge of the mobile defects), but it cannot obviate them if long-range Coulombic interactions are in action among the defects.

Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour.

In thin films of mixed ionic electronic conductors sandwiched by two ion-blocking electrodes, the homogeneous migration of ions and their polarization will modify the electronic carrier distribution across the conductor, thereby enabling homogeneous resistive switching. Here we report non-filamentary memristive switching based on the bulk oxide ion conductivity of amorphous GaOx (x~1.1) thin films.

A combined DFT + U and Monte Carlo study on rare earth doped ceria.

We investigate the dopant distribution and its influence on the oxygen ion conductivity of ceria doped with rare earth oxides by combining density functional theory and Monte Carlo simulations. We calculate the association energies of dopant pairs, oxygen vacancy pairs and between dopant ions and oxygen vacancies by means of DFT + U including finite size corrections. The cation coordination numbers from ensuing Metropolis Monte Carlo simulations show remarkable agreement with experimental data.

1H-NMR measurements of proton mobility in nano-crystalline YSZ.

We report nuclear magnetic resonance (NMR) results on water saturated, dense, nano-crystalline YSZ samples (9.5 mol% yttria doped zirconia) which exhibit proton conductivity at temperatures as low as room temperature. (1)H-NMR spectra recorded under static and magic angle spinning conditions show two distinct signals.

Entropies of defect formation in ceria from first principles.

We calculate entropies of formation for fully charged point defects, including the small polaron Ce'(Ce), in undoped fluorite-structured ceria by means of density functional theory in the GGA + U approximation. We discuss the behaviour of the entropy for the constant volume and the constant pressure case. Our results for constant pressure (p = 0) suggest that the change in volume, due to the formation of defects, dominates the entropy of formation.

A concerted migration mechanism of mixed oxide ion and electron conduction in reduced ceria studied by first-principles density functional theory.

Ceria based oxides are regarded as key oxide materials for energy and environmental applications, such as solid oxide fuel cells, oxygen permeation membranes, fuel cell electrodes, oxygen storage, or heterogeneous catalysis. This great versatility in applications is rendered possible by the fact that rare earth-doped ceria is a pure oxygen ion conductor while undoped ceria, CeO(2-δ), is a mixed oxygen ion-electron conductor. To get deeper insight into the mixed conduction mechanism of oxygen ions and electrons from atomistic and electronic level viewpoints we have applied first-principles density functional theory (DFT + U method).

Electrochemical activation of molecular nitrogen at the Ir/YSZ interface.

Nitrogen is often used as an inert background atmosphere in solid state studies of electrode and reaction kinetics, of solid state studies of transport phenomena, and in applications e.g. solid oxide fuel cells (SOFC), sensors and membranes.