Field-position dependent apodization in dark-field digital holographic microscopy for semiconductor metrology.

Measuring overlay between two layers of semiconductor devices is a crucial step during electronic chip fabrication. We present dark-field digital holographic microscopy that addresses various overlay metrology challenges that are encountered in the semiconductor industry. We present measurement results that show that the point-spread function of our microscope depends on the position in the field-of-view.

Spatially Shaping Waves to Penetrate Deep inside a Forbidden Gap.

It is well known that waves with frequencies within the forbidden gap inside a crystal are transported only over a limited distance-the Bragg length-before being reflected by Bragg interference. Here, we demonstrate how to send waves much deeper into crystals in an exemplary study of light in two-dimensional silicon photonic crystals. By spatially shaping the wave fronts, the internal energy density-probed via the laterally scattered intensity-is enhanced at a tunable distance away from the front surface.

Experimental probe of a complete 3D photonic band gap.

The identification of a complete three-dimensional (3D) photonic band gap in real crystals typically employs theoretical or numerical models that invoke idealized crystal structures. Such an approach is prone to false positives (gap wrongly assigned) or false negatives (gap missed). Therefore, we propose a purely experimental probe of the 3D photonic band gap that pertains to any class of photonic crystals.