Large-area epitaxial growth of MoSe via an incandescent molybdenum source.

We have developed an incandescent Mo source to fabricate large-area single-crystalline MoSe thin films. The as-grown MoSe thin films were characterized using transmission electron microscopy, energy dispersive x-ray spectroscopy, atomic force microscopy, Raman spectroscopy, photoluminescence (PL), reflection high energy electron diffraction (RHEED) and angular resolved photoemission spectroscopy (ARPES). A new Raman characteristic peak at 1591 cm was identified.

Self-Assembled Formation of Well-Aligned Cu-Te Nano-Rods on Heavily Cu-Doped ZnTe Thin Films.

Cu doping of ZnTe, which is an important semiconductor for various optoelectronic applications, has been successfully achieved previously by several techniques. However, besides its electrical transport characteristics, other physical and chemical properties of heavily Cu-doped ZnTe have not been reported. We found an interesting self-assembled formation of crystalline well-aligned Cu-Te nano-rods near the surface of heavily Cu-doped ZnTe thin films grown via the molecular beam epitaxy technique.